Raman Scattering in CdGa2S4 under Pressure

Mitani, Takeshi; Onari, Seiichiro; Allakhverdiev, K. R.; Gashimzade, F. M.; Kerimova, T. G.

doi:10.1002/1521-3951(200101)223:1<287::aid-pssb287>3.0.co;2-b

Cited by 17 publications

(21 citation statements)

References 4 publications

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“…Interestingly, this is not true [146]. Actually, the little pressure dependence of the librational mode, which is usually lowest-lying mode, is rather a common property among those crystals having rigid units [152][153][154].…”

Section: Phonon Propertiescontrasting

confidence: 97%

Electronic structures and mechanical properties of boron and boron-rich crystals (Part I)

Shirai

2010

J. Superhard Mater.

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Section: Phonon Propertiescontrasting

confidence: 97%

Electronic structures and mechanical properties of boron and boron-rich crystals (Part I)

Shirai

2010

J. Superhard Mater.

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“…Mitani et al, 27 who observed the disappearance of Raman peaks around 15 GPa, consistent with the DR phase found by HP-XRD above 17 GPa. 22 However, these two HP-RS works could only tentatively identify the LO counterparts of the Raman modes and showed slight differences in the behavior of the Raman modes at HP.…”

Section: Introductionsupporting

confidence: 82%

Vibrational properties of CdGa2S4 at high pressure

Gallego-Parra

Gomis

Vilaplana

et al. 2019

Journal of Applied Physics

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Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressureinduced phase transitions. These measurements have been complemented and compared with lattice-dynamics ab initio calculations including the TO-LO splitting at high pressures in order to provide a better assignment of experimental Raman modes. In addition, experimental and theoretical Grüneisen parameters have been reported in order to calculate the molar heat capacity and thermal expansion coefficient of CdGa2S4. Our measurements provide evidence that CdGa2S4 undergoes an irreversible phase transition above 15 GPa to a Raman-inactive phase, likely with disordered rocksalt structure. Moreover, the Raman spectrum observed on downstroke from 25 GPa to 2 GPa has been attributed to a new phase, tentatively identified as a disordered zincblende structure, that undergoes a reversible phase transition to the Raman-inactive phase above 10 GPa.

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“…7,8 High-pressure (HP) studies on A II B 2 III X 4 VI compounds are receiving increasing attention in the last years. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] In particular, the AGa 2 Se 4 (A ¼ Mn, Zn, and Cd) family has been studied by X-ray diffraction (XRD), Raman spectroscopy, and optical absorption. However, only few works have been devoted to the study of HgGa 2 Se 4 under pressure.…”

Section: Introductionmentioning

confidence: 99%

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

Gomis¹,

Vilaplana²,

Manjón³

et al. 2013

Journal of Applied Physics

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In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa 2 Se 4) which belongs to the family of AB 2 X 4 ordered-vacancy compounds with tetragonal defect chalcopyrite structure. We have carried out high-pressure x-ray diffraction measurements up to 13.2 GPa. Our measurements have been complemented and compared with total-energy ab initio calculations. The equation of state and the axial compressibilities for the lowpressure phase of HgGa 2 Se 4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The theoretical cation-anion and vacancy-anion distances in HgGa 2 Se 4 have been determined. The internal distance compressibility in HgGa 2 Se 4 has been compared with those that occur in binary HgSe and eÀGaSe compounds. It has been found that the Hg-Se and Ga-Se bonds behave in a similar way in the three compounds. It has also been found that bulk compressibility of the compounds decreases following the sequence "e-GaSe > HgGa 2 Se 4 > HgSe." Finally, we have studied the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa 2 Se 4. Our calculations report that the low-pressure phase of HgGa 2 Se 4 becomes mechanically unstable above 13.3 GPa. V

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Raman Scattering in CdGa2S4 under Pressure

Cited by 17 publications

References 4 publications

Electronic structures and mechanical properties of boron and boron-rich crystals (Part I)

Electronic structures and mechanical properties of boron and boron-rich crystals (Part I)

Vibrational properties of CdGa2S4 at high pressure

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

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