Raman scattering in amorphous Ge and III–V compounds

Wihl, M.; Cardona, M.; Tauc, J.

doi:10.1016/0022-3093(72)90132-9

Cited by 140 publications

(52 citation statements)

References 4 publications

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“…The DATO and DALO structures have become completely merged into a broad band containing the whole density of states of the optical modes. This spectrum resembles that of amorphous InP 46 . Hence, we notice that InP has become amorphised at 1×10 14 ions/cm 2 and further increase of ûuences does not produce changes in the LO or TO modes ( Fig. 14(e), 14(f)).…”

Section: Nano-patterning By Mev Ion Irradiationmentioning

confidence: 64%

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Paramanik¹,

Majumder²,

Sahoo³

et al. 2009

DSJ

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Ion Irradiation is a technologically important technique to modify the surfaces. We have investigated the patterning of InP(111) surfaces by low energy (3 keV) as well as high energy (1.5 Mev) ion beams. After low energy ion irradiation, surfaces exhibit well defined nano dots which ripen at initial stages but exhibit fragmentations at high fluences. The surface rms, at both the energies, displays a similar behaviour of initially increasing with increasing fluences but decreasing for higher fluences. The studies show some common features at these low and high energies, like the smoothening of surface beyond the a/c transition.

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Section: Nano-patterning By Mev Ion Irradiationmentioning

confidence: 64%

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Paramanik¹,

Majumder²,

Sahoo³

et al. 2009

DSJ

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“…Raman study of amorphous selenium [31] and amorphous germanium [32] have been reported in the last 60s. Concerning Ge-based chalcogenide glasses, a lot of published data report on amorphous (a-) GeSe 2 structure [33][34][35][36][37] and to less extent on more complex system, such as ternary and quaternary glasses [38][39][40][41][42].…”

Section: Structure Of (Gese 2 ) 100-x (Sb 2 Se 3 ) X Glassesmentioning

confidence: 99%

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Olivier¹,

Tchahame²,

Němec³

et al. 2014

Opt. Mater. Express

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Chalcogenide glasses from (GeSe 2 ) 100-x (Sb 2 Se 3 ) x system were synthesized, with x varying from 5 to 70, in order to evaluate the influence of antimony selenide addition on nonlinear optical properties and photosensitivity. Nonlinear refractive index and two photon absorption coefficients were measured both at 1064 nm in picosecond regime using the Z-scan technique and at 1.55 µm in femtosecond regime using an original method based on direct analysis of beam profile change while propagating in the chalcogenide glasses. The study of their photosensitivity at 1.55 m revealed highly glass composition dependent behavior and quasi-photostable compositions have been identified in femtosecond regime. To better understand these characteristics, the evolution of the glass transition temperature, density and structure with the chemical composition were determined.

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“…A similar structure was observed in heavily implanted InP 17,18 and assigned to P-P vibrations in phosphorus clusters. 19 The detection of P-P vibrations associated with phosphorus clusters provides further evidence that a substantial phosphorus diffusion occurs through region II areas and it shows that not all the diffused P atoms are substitutionally incorporated to the crystal lattice in these areas.…”

mentioning

confidence: 91%

Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

Hernández

Blánco

Mártil

et al. 2003

Journal of Applied Physics

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We report on Raman scattering measurements on annealed In 0.53 Ga 0.47 As/InP layers that reveal the outdiffusion of phosphorus from the substrate and its possible incorporation in substitutional positions in the In 0.53 Ga 0.47 As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiN x :H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate. Protruding regions of a few microns were observed on the surface, which were identified as misoriented In 1Ϫx Ga x P and InP crystals by means of micro-Raman measurements.

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Raman scattering in amorphous Ge and III–V compounds

Cited by 140 publications

References 4 publications

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

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