Raman Scattering in a Double-Doped Single Crystal LiTaO3:Cr(0.2):Nd(0.45 wt%)

Сидоров, Н. В.; Палатников, М. Н.; Pyatyshev, A. Yu.

doi:10.3390/photonics9100712

Photonics

2022

DOI: 10.3390/photonics9100712

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Raman Scattering in a Double-Doped Single Crystal LiTaO3:Cr(0.2):Nd(0.45 wt%)

Н. В. Сидоров

М. Н. Палатников

A. Yu. Pyatyshev

Abstract: The Raman spectra of a lithium tantalate crystal doubly doped with chromium and neodymium LiTaO3:Cr(0.2):Nd(0.45 wt%) have been studied in this paper. Raman spectra of the first and second orders have been found to be located against the background of a luminescent halo with a maximum at ≈1250 cm−1. Several Raman bands have been detected in the frequency range of 900–2000 cm−1. Their frequencies were 940, 1034, 1113, 1171, 1250, 1343, 1428, 1491, 1582, 1735, 1838, and 1925 cm−1. These bands correspond to overt… Show more

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Cited by 4 publications

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Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices

Fang,

Xie,

Xue

et al. 2024

Photon. Res.

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Surface acoustic wave (SAW) resonators based on lithium tantalate (LT, LiTaO3) wafers are crucial elements of mobile communication filters. The use of intrinsic LT wafers typically brings about low fabrication accuracy of SAW resonators due to strong UV reflection in the lithography process. This hinders their resonance frequency control seriously in industrial manufacture. LT doping and chemical reduction could be applied to decrease the UV reflection of LT wafers for high lithographic precision. However, conventional methods fail to provide a fast and nondestructive approach to identify the UV performance of standard single-side polished LT wafers for high-precision frequency control. Here, we propose a convenient on-line sensing scheme based on the colorimetry of reduced Fe-doped LT wafers and build up an automatic testing system for industrial applications. The levels of Fe doping and chemical reduction are evaluated by the lightness and color difference of LT-based wafers. The correlation between the wafer visible colorimetry and UV reflection is established to refine the lithography process and specifically manipulate the frequency performance of SAW resonators. Our study provides a powerful tool for the fabrication control of SAW resonators and will inspire more applications on sophisticated devices of mobile communication.

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Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices

Fang,

Xie,

Xue

et al. 2024

Photon. Res.

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Investigation of the Structural Perfection of a LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%) Double-Doped Single Crystal Using the Raman Spectra Excited by Laser Lines in the Visible (532 nm) and Near-IR (785 nm) Regions

et al. 2023

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A compositionally homogeneous nonlinear optical single crystal of double-doped LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%) was obtained. Fine features of the LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%) crystal structure were studied from the Raman spectra of the first and second orders upon excitation by laser lines in the visible (532 nm) and near-IR (785 nm) regions. When the Raman spectrum was excited by a 785 nm laser line in the frequency range of 1000–2000 cm−1 for the first time, a number of low-intensity lines in the range of 900–2000 cm−1, corresponding to the second-order Raman spectrum, were discovered. The same lines also appear in the spectrum upon excitation by a laser line with a wavelength of 532 nm, but their intensities are significantly (by an order of magnitude or more) lower. It is shown that in the structure of the double-doped LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%), the crystal oxygen-octahedral clusters MeO6 (Me–Li, Nb, Gd, Mg) are slightly distorted, and in addition, the value R = [Li]/[Nb] ≈ 1 is close to that for a nominally pure stoichiometric crystal.

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Comparison of Raman Spectra of Optically Nonlinear LiTaO3:Cr3+ (0.005 wt%) Crystal Laser Excited in Visible (532 nm) and Near-IR (785 nm) Areas

et al. 2023

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Raman spectra have been excited by the radiation of lasers generatingon in the visible (532 nm) and near-IR (785 nm) ranges in a LiTaO3:Cr3+ (0.005 wt%) crystal. The obtained spectra were compared. Recorded Raman spectra contained bands in the range of <900 cm−1 (first order) up to 2000 cm−1 (second order). The Raman spectra of the second order, excited by near-IR laser radiation, were located against the background of a wide, luminescent halo. The frequency of a single low-intensity band exceeded the exact frequency of an overtone corresponding to the completely symmetric fundamental 4A1(z)LO mode. The attribution of other second-order bands with higher frequencies remains unclear.

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Raman Scattering in a Double-Doped Single Crystal LiTaO3:Cr(0.2):Nd(0.45 wt%)

Cited by 4 publications

References 40 publications

Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices

Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices

Investigation of the Structural Perfection of a LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%) Double-Doped Single Crystal Using the Raman Spectra Excited by Laser Lines in the Visible (532 nm) and Near-IR (785 nm) Regions

Comparison of Raman Spectra of Optically Nonlinear LiTaO3:Cr3+ (0.005 wt%) Crystal Laser Excited in Visible (532 nm) and Near-IR (785 nm) Areas

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Raman Scattering in a Double-Doped Single Crystal LiTaO3:Cr(0.2):Nd(0.45 wt%)

Cited by 4 publications

References 40 publications

Optical colorimetric LiTaO3 wafers for high-precision lithography on frequency control of SAW devices

Optical colorimetric LiTaO3 wafers for high-precision lithography on frequency control of SAW devices

Investigation of the Structural Perfection of a LiNbO3:Gd3+(0.003):Mg2+(0.65 wt.%) Double-Doped Single Crystal Using the Raman Spectra Excited by Laser Lines in the Visible (532 nm) and Near-IR (785 nm) Regions

Comparison of Raman Spectra of Optically Nonlinear LiTaO3:Cr3+ (0.005 wt%) Crystal Laser Excited in Visible (532 nm) and Near-IR (785 nm) Areas

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Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices

Optical colorimetric LiTaO₃ wafers for high-precision lithography on frequency control of SAW devices