Raman scattering by LO phonon-plasmon coupled modes in<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>0.53</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.47</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>

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Raman scattering has been used to study the lattice recovery and electrical activation of Si ϩ -implanted In 0.53 Ga 0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery of totally amorphized samples is studied for annealing temperatures between 300 and 875°C. A good degree of recovery is achieved for an annealing temperature of 600°C. Higher annealing temperatures are required to electrically activate the Si donors. The observed LO phonon-plasmon coupled modes allow us to monitor the electrical activation by means of Raman scattering. We find that electrical activation sets in for annealing temperatures around 700°C, and gradually increases up to an annealing temperature of 875°C. The optimal conditions for the rapid thermal annealing are found to be 875°C for 10 s.

“…In this work we have used ͑100͒-oriented In 0.53 Ga 0. with a dose of 5ϫ10 14 cm Ϫ2 . For these implantation conditions, TRIM calculations yield a peak Si concentration of 2.3ϫ10…”

Section: Methodsmentioning

confidence: 99%

Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

Hernández

Cuscó

Blánco

et al. 2003

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“…19, which allows one to determine the LO frequencies of ternary alloys without any adjustable parameters, in order to estimate the effect of ionic plasmon coupling on the GaAs-like LO branch of GaAs 1−y N y . This model has successfully accounted for the LO phonon behavior 19 and LO-plasmon coupling phenomena 23,24 in ͑In-,Ga͒As ternary alloys. For the calculations, which we restricted to the dilute regime, we used the following data: for the GaAs-like TO branch of Ga͑As,N͒, we used the experimental frequency dependence, as obtained from Fig.…”

Section: Gaas-like To-lo Splittingmentioning

confidence: 99%

Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering

Ibáñez

Alarcón-Lladó

Cuscó

et al. 2007

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We present a Raman-scattering study on strain-free dilute Ga͑As,N͒ epilayers grown by molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the effect of biaxial strain on the frequency behavior of the optical phonon modes of Ga͑As,N͒. In the relaxed epilayers, we observe the following: ͑i͒ for the GaN-like LO mode, an upward frequency shift with increasing N which is larger than previously observed in strained samples; ͑ii͒ for the GaAs-like LO mode, a redshift with increasing N content which is lower than those reported in the literature on strained samples; and ͑iii͒ for the GaAs-like TO mode, we observe a very minor blueshift with increasing N fraction. We discuss the origin of the observed shifts, with particular attention to the reduction of the GaAs-like TO-LO splitting in Ga͑As,N͒. Our data and analysis suggest that such reduction cannot be explained only by a reduction of the total number of Ga-As oscillators due to the substitution of As by N. We discuss the effects of disorder and of ionic plasmon coupling between the GaAs and GaN sublattices of Ga͑As,N͒ on the behavior of the GaAs-like LO mode of the alloy. We conclude that the behavior of this mode is determined by long-range effects.

“…9 The plasmon-like L ϩ coupled mode is smeared out by the inhomogeneous implantation profile, giving rise to a weak band between 550 and 800 cm Ϫ1 that can be clearly seen in curve A of the inset of Fig. 2.…”

mentioning

confidence: 99%

“…An additional peak at 257 cm Ϫ1 is detected between the disorder-related mode and the GaAs-like LO mode, which corresponds to the intermediate frequency coupled mode. 9 The peak observed at 228 cm…”

mentioning

confidence: 99%

Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

Hernández

Blánco

Mártil

et al. 2003

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We report on Raman scattering measurements on annealed In 0.53 Ga 0.47 As/InP layers that reveal the outdiffusion of phosphorus from the substrate and its possible incorporation in substitutional positions in the In 0.53 Ga 0.47 As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiN x :H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate. Protruding regions of a few microns were observed on the surface, which were identified as misoriented In 1Ϫx Ga x P and InP crystals by means of micro-Raman measurements.