Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Tronc, P.; Bensoussan, M.; Brenac, Alain; Errandonéa, G.; Sébenne, C.A.

doi:10.1051/jphys:0197700380120149300

Cited by 35 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These two features remain unchanged before and after thermal annealing, indicating the host material is stable, and implantation and annealing have not resulted in detectable changes in the chemical bonding. The growth of features at 150cm −1 and 175cm −1 after 10 hours of annealing has occasionally been seen in un-doped films of Ge 11.5 As 24 Se 64.5 and is thought to be a result of nanoscale phase separation and the appearance of a GeSe or As 4 Se 4 phase [24,25]. It is therefore not considered to be due to the erbium doping or ion implant processes.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Yan¹,

Wang²,

Vu³

et al. 2012

Opt. Mater. Express

View full text Add to dashboard Cite

We report the properties of thermally evaporated Ge 11.5 As 24 Se 64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4 I 13/2 → 4 I 15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180°C. Different apparent lifetimes for the 4 I 13/2 → 4 I 15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

show abstract

Section: Resultsmentioning

confidence: 99%

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Yan¹,

Wang²,

Vu³

et al. 2012

Opt. Mater. Express

View full text Add to dashboard Cite

show abstract

“…6 indicates that the first peak position in the amorphous gr agrees not with the nearest bond length in crystalline GeS, but with that in crystalline GeS 2 , which is made up of connecting GeS 4a2 tetrahedra. Further, Tronc et al [17] have reported that the Raman spectrum of crystalline GeSe has two strong peaks at 150 and 187 cm À1 , respectively. In Fig.…”

Section: Discussionmentioning

confidence: 99%

Short-Range Structure in Amorphous Ge3(Se1—xSx)4 and Ge3(Se1—xTex)4 Alloys

Uemura

Usuki

Murakami

et al. 1998

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…Solin and Papatheodorou [26] have observed also many sharp lines in the Raman spectra of as-' ) These results on the vibrational properties of the Ge-rich Gel -& glasses are also consistent with the vibrational properties of Ge-rich Gel-,Se, glasses studied by Tronc e t al. [25].…”

Section: > 14 Atyo Gtmentioning

confidence: 95%

Infrared Reflection and Raman Scattering Studies of the Vibrational Properties and Structure of As₂S₃Ge_x Glasses

Giehler¹,

Pilz²

1979

Physica Status Solidi (b)

View full text Add to dashboard Cite

Infrared reflection and Raman spectra of As,S,Ge, (0 I : z 35 atyo) glasses are studied.The spectra are explained in terms of vibrational modes of atomic building blocks the investigated glasses are composed of. Particularly, the vibrational properties of the As,S,Ge, (x < 4 atyo) glasses are due to internal vibrations of AsS3j2 pyramidal and weakly As-rich As,S, ( r / s 5 1) building blocks. The number of GeS4p tetrahedral building blocks is very small, therefore, these structures do not noticeably affect the infrared reflection and Raman spectra of the considered glasses. The vibrational properties of the As,SoGe, (4 5 z & 14 atyo) samples are dominantly affected by vibrations of As-rich As,S, (r/s = l), GeS4p tetrahedral, and AsS3p pyramidal building blocks. (The number of AsS3/2 pyramidal building blocks approaches zero in samples with Ge contents above about 10 at%.) Raman spectra indicate that samples with Ge contents between about 4 and 12.5 at% contain realgar-like microcrystals. The vibrational properties of the As,S,Ge, (z > 14 atyo) glasses mainly are caused by vibrational modes of GeSqz tetrahedm1 and strongly As-rich As$, ( r / s 2 1.3; including AsAs3/3) building blocks. Stretching vibrations of As-As bonds of these strongly As-rich As,S, building blocks are indicated in the Raman spectra of the considered glasses. I n glasses with z 2 23 atyo Ge content the number of As-S bonds becomes zero, therefore weakly Ge-rich Ge,S, (u/w 2 0.67) building blocks are formed.Infrarotreflexions-and Ramanspektren von As,S,Ge,-Glasern (0 5 x 5 35At%) werden untersucht.Die Spektren werden durch interne Schwingungen der atomaren Baugruppen erklart, aus denen die untersuchten Glaser zusammengesetzt sind. I m einzelnen werden die Schwingungseigenschaften der As,S,Ge,-Glaser (z < 4 Atyo) durch Schwingungsmoden von pyramidenformigen ASS3p-und schwach As-reichen As,S, ( r / s 5 1)-Baugruppen erklart. Da die Anzahl der tetraederformigen GeSajz-Baugrupp-n in den bstrachteten Glasern sehr klein ist, beeinflussen diese Baugruppen die Infrarotreflexions-und Ramanspektren nicht nachweisbar. Die Schwingungseigenschaften der As,S,Ge,-Proben (4 x 14 Atyo) werden hauptsachlich durch Schwingungen von As-reichen As,S, (r/s Y 1)-, tetraederformigen GeS4p-und pyramidenformigen AsS312-Baugruppen bestimmt. (Die Anzahl der pydramidenformigen AsS3pBaugruppen wird in den Proben mit einem Ge-Gehalt grol3er als etwa 10 Atyo Null.) Ramanspektren zeigen, daB Proben mit einem Ge-Gehalt zwischen ca. 4 und 12,5 Atyo realgarahnliche Alikrokristalle enthalten. Die Schwingungseigenschaften der As,S,Ge,-Gliser (z > 14 Atyo) werden hauptsachlich durch Schwingungsmoden von tetraederformigen GeS4p-und stark As-reichen As,S, ( r / s 2 1,3; einschlieBlich AsAssjs)-Baugruppen verursacht. Streckungsschwingungen von As-As-Bindungen dieser stark As-reichen As$,-Baugruppen werden in den Ramanspektren der betrachteten Glaser nachgewiesen. I n Glasern mit einem Ge-Gehalt z 2 23 Atyo wird die Anzahl der As-S-Bindnngen Kull, daher werden sehwach Ge-reiche Ge,S, (u/...

show abstract

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Cited by 35 publications

References 12 publications

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Short-Range Structure in Amorphous Ge3(Se1—xSx)4 and Ge3(Se1—xTex)4 Alloys

Infrared Reflection and Raman Scattering Studies of the Vibrational Properties and Structure of As₂S₃Ge_x Glasses

Contact Info

Product

Resources

About

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Cited by 35 publications

References 12 publications

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Short-Range Structure in Amorphous Ge3(Se1—xSx)4 and Ge3(Se1—xTex)4 Alloys

Infrared Reflection and Raman Scattering Studies of the Vibrational Properties and Structure of As2S3Gex Glasses

Contact Info

Product

Resources

About

Infrared Reflection and Raman Scattering Studies of the Vibrational Properties and Structure of As₂S₃Ge_x Glasses