Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Qin, Jiaqian; Liao, Pai-Ying; Si, Mengwei; Gao, Shiyuan; Qiu, Gang; Jian, Jie; Wang, Qingxiao; Zhang, Siqi; Huang, Shouyuan; Charnas, Adam; Wang, Yixiu; Kim, Moon J.; Wu, Wenzhuo; Xu, Xianfan; Wang, Haiyan; Yang, Li; Yap, Yoke Khin; Ye, Peide D.

doi:10.1038/s41928-020-0365-4

Cited by 153 publications

(185 citation statements)

References 55 publications

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“…A comparison of performance of the presented Te nanowire transistor with other reported Te‐based transistors [ 16,17,34 ] [ 50–52 ] is shown in Figure 5f,g in terms of drive current and on–off ratio. To make a fair comparison by accommodating varied device dimensions and biasing conditions in reported data from the literature, we scale the drive current ( I ON ) by the drain field and the circumference of the nanowire (channel width in case of 2D flakes) as follows:

\begin{matrix} I_{scaled} = \frac{I_{ON} L_{wire}}{2 π r V_{DS}} \end{matrix}

Previous reports suggest that Te exhibits high mobility for thicker films (and wider nanowires); however, it becomes challenging to turn the channel off at such channel thickness.…”

Section: Resultsmentioning

confidence: 99%

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Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Dasika

Samantaray

Krishna

et al. 2021

Adv Funct Materials

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The gate‐all‐around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub‐5 nm technology nodes. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here a dual‐gated junctionless nanowire p‐type field effect transistor is demonstrated using tellurium nanowire as the channel. The dangling‐bond‐free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling‐bond‐free, high quality hBN gate dielectric, allows for a phonon‐limited field effect hole mobility of 570 cm2 V−1 s−1 at 270 K, which is well above state‐of‐the‐art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390 cm2 V−1 s−1 and becomes primarily limited by Coulomb scattering. The combination of an electron affinity of ≈4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal‐contact interface, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual‐gated operation, we achieve a high drive current of 216 μA μm−1 while maintaining an on‐off ratio in excess of 2 × 104. The findings have intriguing prospects for alternate channel material based next‐generation electronics.

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\begin{matrix} I_{scaled} = \frac{I_{ON} L_{wire}}{2 π r V_{DS}} \end{matrix}

Previous reports suggest that Te exhibits high mobility for thicker films (and wider nanowires); however, it becomes challenging to turn the channel off at such channel thickness.…”

Section: Resultsmentioning

confidence: 99%

“…This unique anisotropic crystal structure of Te provides an opportunity to synthesize nanowires of Te down to single chain Te atoms. [ 17,18 ]…”

Section: Introductionmentioning

confidence: 99%

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Dasika

Samantaray

Krishna

et al. 2021

Adv Funct Materials

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“…found that van der Waals tellurium nanowires encapsulated in boron nitride nanotubes (BNNTs) have extremely high current carrying capacity (current density ≈ 1.5 × 10 8 A cm −2 ) which is much larger than that of 2D materials and most nonlayered semiconductor nanowires. [ 5 ] Xiang et al. demonstrated the advantages of 1D materials in the preparation of small‐sized devices by constructing a ternary (carbon nanotube (CNT)‐BN‐MoS 2 ) 1D van der Waals heterostructure with a diameter of only 5 nm, which may be the smallest metal‐insulator‐semiconductor device proven to date.…”

Section: Introductionmentioning

confidence: 99%

Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts

et al. 2020

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BN-MoS 2) 1D van der Waals heterostructure with a diameter of only 5 nm, which may be the smallest metal-insulator-semiconductor device proven to date. [6] In addition, all of these prior works demonstrated the potential of 1D materials as high-current density conductors. [7] First-principles calculations expose that ultra-long ballistic phonon transmissions are generated by highly focused longitudinal phonons that propagate along one dimension, [8] and thermal conductivity may diverge under 1D limit conditions. [9] Therefore, synthesizing and studying 1D materials are conducive to our understanding of their unique thermal, optical, and electrical properties, thus further promoting various applications of such materials. At present, the growth of 1D van der Waals materials is mainly conducted by chemical vapor deposition (CVD) with the help of CNTs or BNNTs. CVD is an effective strategy for synthesizing layered materials with excellent electro-optical properties. However, large temperature differences (>10 °C) cause growth kinetics to deviate from equilibrium, and the synthesized layered materials usually have a lot of defects and grain boundaries. [10] According to the classical band theory, a large number of defects in a crystal will generate deep levels or trap states inevitably, which usually limits the carrier mobility. [11] Simultaneously, the halogen element is usually not a stable reactant for the CVD method, which also makes it unsuitable for the growth of binary van der Waals materials containing halogen atoms. Therefore, there are still many challenges for synthesizing high-quality and large-size single-crystal van der Waals materials in this method, especially for those containing halogen elements. [10,12] Alternatively, van der Waals materials with large crystal size and high crystal quality can be obtained by mechanical exfoliation, but it is difficult to get them controlled in one dimension. Therefore, for the growth of large-scale 1D van der Waals materials, a new and efficient synthesis method is urgently needed. Here, we propose a new method that combines organic liquid phase synthesis and post-annealing. With the singlechain structure of CdBr 2 •4H 2 O, we successfully synthesized the high-quality and large-sized CdBr 2 van der Waals micro/nanobelts. Compared with CVD, this synthetic method reported in this article has shown two obvious advantages in growing highquality, large-size 1D van der Waals materials. First, according to the crystal growth thermodynamics and defect formation mechanism, [13] there is almost no temperature difference (<0.1 °C) between the crystal and solution. Liquid phase synthesis can Recently, 1D van der Waals materials with appealing optoelectronic properties different from 2D layered materials have attracted widespread attention. However, the existing methods are incapable of growing the high-quality and large-size 1D van der Waals materials to a certain extent. Here, a new method of organic liquid phase synthesis followed by annealing is proposed, which overcomes th...

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“…lemental tellurium at ambient pressure is a small-band-gap semiconductor with a gap size Δ ≈ 330 meV. Recently, the material and its allotropes received great attention: tellurium might possess Weyl-nodes within the valence band (VB) 1 , it has been proven to show extremely unusual directiondependent magnetoresistance (interpreted as being due to the magnetochiral effect) 2 , it is considered to be an excellent thermoelectric 3,4 , its helices in nanotubes might help to extend Moore's law 5 , and its spin-texture allows a current-induced bulk magnetization 6 .…”

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confidence: 99%

Pressure-induced Anderson-Mott transition in elemental tellurium

et al. 2021

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Elemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains arranged in a triangular lattice, and the presence of a spin-polarized Fermi surface, render tellurium a promising candidate for future applications. Here, we use a theoretical framework, appropriate for describing the corrections to conductivity from quantum interference effects, to show that a high-quality tellurium single crystal undergoes a quantum phase transition at low temperatures from an Anderson insulator to a correlated disordered metal at around 17 kbar. Such insulator-to-metal transition manifests itself in all measured physical quantities and their critical exponents are consistent with a scenario in which a pressure-induced Lifshitz transition shifts the Fermi level below the mobility edge, paving the way for a genuine Anderson-Mott transition. We conclude that previously puzzling quantum oscillation and transport measurements might be explained by a possible Anderson-Mott ground state and the observed phase transition.

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Cited by 153 publications

References 55 publications

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts

Pressure-induced Anderson-Mott transition in elemental tellurium

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Cited by 153 publications

References 55 publications

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Ultra‐Long Van Der Waals CdBr2 Micro/Nanobelts

Pressure-induced Anderson-Mott transition in elemental tellurium

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Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts