Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots

Bottani, C. E.; Mantini, C.; Milani, P.; Manfredini, Mattia; Stella, A.; Tognini, P.; Cheyssac, P.; Kofman, R.

doi:10.1063/1.117653

Cited by 77 publications

(43 citation statements)

References 10 publications

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“…The dependence of Raman peak position on nanoparticle diameter gives possibility to employ Raman spectroscopy for nanoparticles size measurements. Experimental Raman studies followed by analysis of obtained spectra in the framework of PCM were provided previously for diamond (see [3] and references there), germanium [4,5], silicon [6] nanoparticles.…”

Section: Mainmentioning

confidence: 99%

“…(11) we find that the downshift for the nanodiamond of this linear size should be 7.3 cm −1 . In a paper [5] frequency shifts are measured for germanium nanoparticles with diameters 2.6, 3, 9.6 and 13 nm, and Raman peaks are indicated at 295.9, 296.7, 299.4, 299.5 cm −1 , respectively. By approximating phonon dispersion presented in [17], we find B = 18.6 cm −1 for germanium.…”

Section: Mainmentioning

confidence: 99%

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New explanation of Raman peak redshift in nanoparticles

Meilakhs

Koniakhin

2017

Superlattices and Microstructures

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In this letter, we propose a new model that explains the Raman peak downshift observed in nanoparticles with respect to bulk materials. The proposed model takes into account discreteness of the vibrational spectra of nanoparticles. For crystals with a cubic lattice (Diamond, Silicon, Germanium) we give a relation between the displacement of Raman peak position and the size of nanoparticles. The proposed model does not include any uncertain parameters, unlike the conventionally used phonon confinement model (PCM), and can be employed for unambiguous nanoparticles size estimation. MainIn nanoparticles the crystalline Raman peak position is downshifted and asymmetrically broadened with respect to bulk materials. Previously the * kon@mail.ioffe.ru 1 arXiv:1602.00114v1 [cond-mat.mes-hall]

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Section: Mainmentioning

confidence: 99%

Section: Mainmentioning

confidence: 99%

New explanation of Raman peak redshift in nanoparticles

Meilakhs

Koniakhin

2017

Superlattices and Microstructures

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“…Bottani et al [44] used the model equation (3) for fitting the experimental Raman spectra with theory. The experimental Raman spectrum of Ge-Ge phonon vibration for preannealed sample is shown by solid curve in inset of Figure 22 (right) and is fitted with the model equation (1) (lower dashed curve) and (3) (middle dotted curve).…”

Section: Annealing Temperaturementioning

confidence: 99%

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Samavati

Mustafa

Othaman

et al. 2015

Journal of Nanomaterials

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The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400 ∘ C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics.

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“…We have to mention that similar absorption lineshapes have been calculated for Si using the empirical-pseudopotential scheme [13] or the semiempirical tightbinding method [14]. The experimental spectra for Ge dots embedded in sapphire [15] show similar main absorption structures.…”

Section: Methodical Frameworkmentioning

confidence: 86%

First-Principles Calculation of Optical Properties: Application to Embedded Ge and Si Dots

Weissker

Furthmüller

Bechstedt

2001

phys. stat. sol. (b)

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Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots

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Cited by 77 publications

References 10 publications

New explanation of Raman peak redshift in nanoparticles

New explanation of Raman peak redshift in nanoparticles

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

First-Principles Calculation of Optical Properties: Application to Embedded Ge and Si Dots

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