Raman intensity profiles of folded longitudinal phonon modes in SiC polytypes

Nakashima, S.; Harima, Hiroshi; Tomita, Takuro; Suemoto, T.

doi:10.1103/physrevb.62.16605

Cited by 33 publications

(36 citation statements)

References 31 publications

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“…They are dominated by a group of peaks due to TO-phonon excitations and LO--phonon mode. The observed excitations can be attributed to folded phonon modes of different symmetry [4]. Two modes of E 2 symmetry: TO(X1/3) and TO(X1) are observed at 784 cm −1 and 812 cm −1 , respectively.…”

Section: Resultsmentioning

confidence: 90%

Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

et al. 2009

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Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11][12][13][14][15][16][17][18][19][20] and [10-10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98-5.5 cm −1 GPa −1 for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6-3.6 cm −1 GPa −1 were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.

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Section: Resultsmentioning

confidence: 90%

Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

et al. 2009

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“…While the calculations showed a good agreement for the vibrational frequencies, significant discrepancies were obtained for the Raman intensities of the low-frequency modes of the hexagonal 4H and 6H polytypes. In fact, such differences could have been anticipated from a previous work [104] in which Nakashima et al definitely put in evidence that it is necessary to take the environment of the SiC bond into account by considering a ratio of the order of 1.11 between the EOPs of the hexagonal and cubic polytypes.…”

Section: Sic Super-latticesmentioning

confidence: 89%

Calculation of off‐resonance Raman scattering intensities with parametric models

Bougeard

Smirnov

2009

J Raman Spectroscopy

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The paper reviews applications of parametric models for calculations of the Raman scattering intensity of materials with the main emphasis on the performance of the bond polarizability model. The use of the model in studies of polymers, aluminosilicates, and nanostructures is discussed and the existing sets of electro-optical parameters as well as their transferability are analyzed. The paper highlights the interplay between the first-principles and parametric approaches to the Raman intensity calculations and suggests further developments in this field.

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“…In the case of 3C-SiC typically two strong Raman peaks are observed: at 972 cm -1 , corresponding to the peak of longitudinal optical (LO) phonons; at 796 cm -1 , corresponding to the peak of transverse optical (TO) phonons [5]. Hexagonal modes for 6H-SiC are indicated by splitting the TO mode into three peaks: TO 2 [5]. In this work, using Raman spectroscopy, electron microscopy and Atomic Force Microscopy the nanolayers of single crystal SiC grown by this method, have been investigated.…”

Section: Introductionmentioning

confidence: 99%

“…Raman spectroscopy is an efficient and non-destructive technique which may be used to identify the structure of the SiC polytype. In the case of 3C-SiC typically two strong Raman peaks are observed: at 972 cm -1 , corresponding to the peak of longitudinal optical (LO) phonons; at 796 cm -1 , corresponding to the peak of transverse optical (TO) phonons [5]. Hexagonal modes for 6H-SiC are indicated by splitting the TO mode into three peaks: TO 2 [5].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

Bakranova

Кукушкин

Nussupov

et al. 2016

MATEC Web of Conferences

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Abstract. The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395 Pa, respectively. The formation of crystalline β-SiC phase in films by electron diffraction and Raman spectroscopy techniques was shown. The SiC films are epitaxial and do not contain twins on the surface. By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer. Two set of SiC films have a granular surface structure with indistinct grain fragmentation. The influence of synthesis condition on the microstructure of film surface is discussed.

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Raman intensity profiles of folded longitudinal phonon modes in SiC polytypes

Cited by 33 publications

References 31 publications

Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

Calculation of off‐resonance Raman scattering intensities with parametric models

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

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