Raman imaging of semiconductor materials: characterization of static and dynamic properties

Abstract

Micro-Raman imaging has been used extensively for characterizing semiconductors. This paper reviews recent developments in the use of Raman microscopy for studying structural and electronic properties of semiconductor crystals and composites. Some results for recent Raman imaging measurements are outlined and discussed.

The potential for histological screening using a combination of rapid Raman mapping and principal component analysis

“…Other groups have used Raman mapping to investigate cells [16,17] and biological tissues in the bronchus [18], breast [19] and brain [20]. Raman mapping has also been used for pharmaceutical [21][22][23], materials [24,25] and geological applications [26]. However, the long overall mapping times have limited the size of the datasets which can be acquired and consequently the biochemical information which can be gleaned using multivariate analysis.…”

Multi-analytical study of syntactic coalescence of polytypes in a 6H–SiC sample

“…In particular, in a polar semiconductor, collective excitation of free carriers interacts with the LO phonon via their macroscopic electric fields to form the LO phonon-plasmon coupled (LOPC) mode. The line-shape of the LOPC mode can change sensitively with the free carrier concentration [15][16][17] and, thus, the Raman spectra obtained in this work may indicate that the L 3 lamella is a 15R characterized by a higher dopant concentration.…”

Facile method to prepare CdS nanostructure based on the CdTe films

“…So, the penetration depth for different excitation wavelength is different, which can be used to analyze the sample information with different layers [38]. The penetration depth of 633 nm is deeper than that of 488 nm for the same material, which is schematically shown in the inset of The PL spectra from as-deposited CdTe thin film, CdS nanowires (sample A) and…”