2015
DOI: 10.1007/s00340-015-6233-7
|View full text |Cite
|
Sign up to set email alerts
|

Raman diagnostics of photoinduced heating of silicon nanowires prepared by metal-assisted chemical etching

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

4
15
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 22 publications
(19 citation statements)
references
References 28 publications
4
15
0
Order By: Relevance
“…It was demonstrated that intense laser radiation focused on the surface of such bulk semiconductors as Si and Ge can heat and melt them . Moreover, heating effects often take place in nanostructures and may be reversible or may be irreversible . Raman spectroscopy provides information locally that may be of great use while studying heating effects in nanostructures.…”
Section: Introductionsupporting
confidence: 88%
“…It was demonstrated that intense laser radiation focused on the surface of such bulk semiconductors as Si and Ge can heat and melt them . Moreover, heating effects often take place in nanostructures and may be reversible or may be irreversible . Raman spectroscopy provides information locally that may be of great use while studying heating effects in nanostructures.…”
Section: Introductionsupporting
confidence: 88%
“…Although the quantum confinements for charge carriers and optical phonons in such nanowires are weak or even negligible, their thermoelectrical properties can be strongly affected by additional scattering of acoustic phonons in the nanowires . Arrays of undoped or low doped SiNWs prepared by metal assisted chemical etching (MACE) exhibit an enhancement of the Raman scattering efficiency due to the strong elastic scattering of the excitation light that can be interpreted as an evidence of the partial light localization in SiNWs array . Also, photoexcitation of such SiNWs can result in their significant heating due to low heat conductivity, and the photoinduced heating can be monitored by Raman spectroscopy .…”
Section: Introductionmentioning
confidence: 99%
“…Arrays of undoped or low doped SiNWs prepared by metal assisted chemical etching (MACE) exhibit an enhancement of the Raman scattering efficiency due to the strong elastic scattering of the excitation light that can be interpreted as an evidence of the partial light localization in SiNWs array . Also, photoexcitation of such SiNWs can result in their significant heating due to low heat conductivity, and the photoinduced heating can be monitored by Raman spectroscopy . At the same time, peculiarities of the Raman scattering in heavily doped SiNWs are still not well investigated.…”
Section: Introductionmentioning
confidence: 99%
“…This fact was explained by the light‐trapping effect caused by light scattering in SiNW array . The latter effect was responsible for an enhancement of the one‐phonon Raman peak in MACE‐SiNW arrays compared with c‐Si . In addition, the Raman spectra of porous MACE‐SiNWs, fabricated on highly doped p‐ and n‐type c‐Si substrates, exhibited the Fano effect, related to the electron–phonon interaction, as well as the phonon confinement effect .…”
Section: Introductionmentioning
confidence: 98%
“…In addition, the Raman spectra of porous MACE‐SiNWs, fabricated on highly doped p‐ and n‐type c‐Si substrates, exhibited the Fano effect, related to the electron–phonon interaction, as well as the phonon confinement effect . Note that the Raman spectra of SiNWs can be strongly affected by the photoinduced heating, that was used to determine the thermal conductivity of SiNWs …”
Section: Introductionmentioning
confidence: 99%