Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates

Hagiwara, Chihiro; Itoh, Kohei M.; Muto, Jun; Nagasawa, Hiroyuki; Yagi, Kuniaki; Harima, Hiroshi; Mizoguchi, K.; Nakashima, S.

doi:10.4028/www.scientific.net/msf.264-268.669

Cited by 6 publications

(3 citation statements)

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“…At the same time the thermal mismatch between these two materials is reduced. For a full compensation of the thermal mismatch Ge concentrations of approximately 12% 0.0 0.5 1.0 1.5 2.0 793 794 795 796 797 Unstrained 3C-SiC [13] Unstrained 3C-SiC [14] Ge coverage (ML ) SSMBE Si(100) UHVCVD Si(100) [8] Wave number (cm )…”

Section: Resultsmentioning

confidence: 99%

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Tuning Residual Stress in 3C-SiC(100) on Si(100)

Pezoldt

Stauden

Niebelschütz

et al. 2010

MSF

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Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in consequence of alloying the near surface region of the Si substrate with Ge.

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Section: Resultsmentioning

confidence: 99%

“…Ge coverage (ML) Fig. 2 TO phonon position determined by FTIRellipsometry of the 3C-SiC(100) epitaxially grown on Si(100) versus Ge coverage compared to unstrained values [13,14] and 3C-SiC(100) layers grown by UHVCVD [8]. Materials Science Forum Vols.…”

Section: Resultsmentioning

confidence: 99%

Tuning Residual Stress in 3C-SiC(100) on Si(100)

Pezoldt

Stauden

Niebelschütz

et al. 2010

MSF

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“…However, deformation potentials are not available for 4H-SiC, so in our calculation, we use phonon deformation potentials for 3C-SiC. [15][16][17] By assuming a biaxial strain, we estimate a tensile strain of order 10 Ϫ4 in ∆a/a in the bright region.…”

Section: Contrast Variations In Cross-polarized Imagesmentioning

confidence: 99%

Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

Glembocki

Prokes

Stahlbush

et al. 2005

Journal of Elec Materi

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Cross-polarized imaging with an optical scanner and confocal µ-Raman spectroscopy have been used to reveal and to study structural defects in n-4H-SiC. We introduce a new method of polarized imaging that uses a combination of linear and circular polarization, which enhances contrast in images of defect regions. Regions that show intensity contrast have been observed to have characteristics of either low-angle grain boundaries or sharp lines of delineation between low and high strain areas. Different types of polytype inclusions have also been observed, and the material within the inclusions has been shown to be either 3C-SiC or 6H-SiC. Polytype inclusions occur as isolated features or form cores of holes, and they can form at any point of the growth.

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Stress and stress monitoring in SiC–Si heterostructures

Pezoldt

Nader

Niebelschütz

et al. 2008

Physica Status Solidi (a)

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Infrared ellipsometry is a valuable tool to investigate the average stress and the stress distribution in thin silicon carbide layers grown on silicon as well as to monitor the changes in the stress state during device processing. It was obtained that low temperature carbonization in combination with low temperature epitaxial growth led to a compressive stress component in the SiC–Si interface region, whereas the average stress state is tensile. Ge incorporation in the interface lowered the tensile residual stress component. Metallization of SiC increases the tensile stress in the SiC on Si. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates

Cited by 6 publications

References 0 publications

Tuning Residual Stress in 3C-SiC(100) on Si(100)

Tuning Residual Stress in 3C-SiC(100) on Si(100)

Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

Stress and stress monitoring in SiC–Si heterostructures

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