Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Abstract

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy Tay, L.; Lockwood, D. J.; Baribeau, J. -M.; Wu, X.; Sproule, G. I.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744851&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744851&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1116/1.1676345 Science and Technology A, 22, 3, pp. 943-947, 2004 Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy Silicon films were deposited by molecular beam epitaxy onto crystalline silicon (c-Si) and native oxide on c-Si ͑001͒ substrates at temperatures ranging from 98 to 572°C. Raman spectroscopy of these films showed that both the short-range disorder and intermediate-range disorder decreases as the deposition temperature increases. The onset of a phase transition in the amorphous Si films can be effectively identified by the appearance of the polycrystalline and crystalline Si Raman bands, which allowed quantification of the crystalline volume fractions present. Both the transmission electron microscopy and Raman results confirmed that films grown on the amorphous substrates at temperatures less than 414°C are entirely amorphous, but exhibit c-Si features at higher temperatures. Films grown on c-Si substrates exhibit a characteristic limiting thickness for epitaxy and the transformation of the resulting upper amorphous layer into crystalline...

Crystallization of Amorphous Silicon Thin Films Using Self-Limiting ALD of Nickel Oxide

“…The contribution of the defective component is estimated to be near 20%. 17 As expected, however, the a-Si thin films did not crystallize without nickel oxide. The presence of nickel oxide provided a driving force in crystallizing the Si crystals through presumably, nickel silicides ͑NiSi 2 ͒.…”

“…where I i is the integrated intensity of component i, y is the weighting factor due to high absorption in amorphous Si thin films ͑in this work, y = 0.28͒, and I d , I a , and I c are the deconvoluted Raman intensities of defective, amorphous, and crystalline components. 17 The amorphous, defective, and crystalline volume fractions were independent of the number of Ni cycles applied to ALD, as shown in Fig. 4.…”

“…The three modes were included to estimate the amorphous and polycrystalline portions of the Niinduced crystallization in the a-Si thin films: ͑i͒ a broad Si-Si transverse optical ͑TO͒ mode band centered at around 475.8 cm −1 , ͑ii͒ the Si-Si mode for crystalline Si located near 520 cm −1 , and ͑iii͒ additional Raman shifts between 505.5 and 517.3 cm −1 , which are attributed to microcrystalline features of Si. 17 The current work suggested that a significant fraction of the crystallinity can be attained on a-Si thin films through the ALD deposition of nickel oxide combined with a reducing atmosphere. Noticeably, the crystallized films did not show the equiaxial grains, unlike Si grains processed using laser annealing.…”

Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

“…Reported Raman shifts included (i) a longitudinal optical mode centered at 407 cm À1 , (ii) a broad Si-Si transverse optical (TO) band centered at about 475.8 cm À1 , (iii) a crystalline Si-Si mode located near 520 cm À1 and (iv) additional contributions between 505.5 and 517.3 cm À1 [13,14]. Based on the previous Raman studies [13,14], the current Raman spectra were interpreted in terms of three components: the amorphous and highly crystalline components, supplemented by additional ''defective'' components that explain the effects of microcrystalline Si, stacking faults, dislocations, and dangling bonds in Si atoms. These structural components are governed by the Lorentz-Gaussian distribution as given by Eq.…”

Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

“…3 shows the Raman spectra of the silicon films deposited with R HCl ¼ 0, 2.8, 4.2 and 6.9. The Raman spectra were decomposed into three peaks for a crystalline region centered at about 520 cm À 1 , intermediate peak near 510 cm À 1 , attributed to a defective part of the crystalline phase, which originates from crystallites of diameters less than 10 nm, a silicon wurtzite phase resulting from twins, or bond dilation at grain boundaries and an amorphous region around 480 cm À 1 [9,29]. With increasing supply of HCl, the crystalline fraction of silicon films increased but the growth rate decreased as can be seen by the decreased film thickness.…”