Raman analysis of monoclinic Cu2SnS3 thin films

Berg, Dominik M.; Djemour, Rabie; Gütay, Levent; Siebentritt, Susanne; Dale, Phillip J.; Fontané, Xavier; Izquierdo-Roca, Víctor; Pérez-Rodrı́guez, A.

doi:10.1063/1.4712623

Cited by 244 publications

(152 citation statements)

References 13 publications

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“…• C) cubic phase is not favor [19,20]. For the samples with 0.19 ≤ x ≤ 0.83, the crystal structure is not distinguishable between either monoclinic or tetragonal.…”

Section: Resultsmentioning

confidence: 99%

“…In addition to this properties, this material has an advantage on the environmental pollution issue since it is chemically stable and has no highly toxic elements composed in it. However, the researches concerning with this CTGS alloy in the thin-film photovoltaic applications are still in the early initial phase and the study on CTGS alloy itself with various Ge contents is still premature compared to the study of individual Cu 2 SnS 3 (CTS) or Cu 2 GeS 3 (CGS) ternary compounds [13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32]. Up to now, only a few reports about the photovoltaic devices based on the CTGS with various Ge contents have been made [12,33,34].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Htay

Mandokoro

Seki

et al. 2015

Solar Energy Materials and Solar Cells

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Cu 2 Sn 1−x Ge x S 3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu 2 (Sn 1−x Ge x ) 3 S 7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu 2 Sn 0.6 Ge 0.4 S 3 absorber.

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“…• C) cubic phase is not favor [19,20]. For the samples with 0.19 ≤ x ≤ 0.83, the crystal structure is not distinguishable between either monoclinic or tetragonal.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Htay

Mandokoro

Seki

et al. 2015

Solar Energy Materials and Solar Cells

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“…The 348-350 cm -1 peak fits also with the main mode of ZnS [15] which would agree with the samples being slightly Zn-rich. Cu 2 SnS 3 [16,17] should also have Raman intensity at this position and is another possible match. No correlation between the shape of the spectrum and substrate temperature or composition was observed.…”

Section: Resultsmentioning

confidence: 99%

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

et al. 2013

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Reactively sputtered Cu-Zn-Sn-S precursor films are prepared and recrystallized by rapid thermal processing to generate Cu 2 ZnSnS 4 solar cell absorber layers. We study how the film properties are affected by substrate heating and composition. The stress, density and texture in the films were measured. Compressive stress was observed for the precursors but did not correlate to the deposition temperature, and had no influence on the properties of the annealed films or solar cells. However, the substrate temperature during precursor deposition had a large effect on the behaviour during annealing and on the solar cell performance. The films deposited at room temperature had, after annealing, smaller grains and cracks, and gave shunted devices. Cracking is suggested to be due to a slightly higher sulfur content, lower density or to minor differences in material quality. The grain size in the annealed films seems to increase with higher copper content and higher precursor deposition temperature. The best device in the current series gave an efficiency of 4.5 %.

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“…While the band gap value of 1.51 eV measured by Kuku et al appears to be very high, values between 0.93 and 1.35 eV for the band gap seem to be dependent on the crystal structure of the polymorphic compound Cu 2 SnS 3 , where 0.98 eV was measured for a cubic phase and 1.35 eV for a tetragonal phase [11]. The polymorphic state of a grown Cu 2 SnS 3 is dependent on the growth temperature, where the cubic Cu 2 SnS 3 is known to form at high temperatures (> 775 °C) and the monoclinic and triclinic as well as the tetragonal phases are low temperature phases (< 775 °C) [13,14]. For this work, the samples have been prepared at temperatures where a monoclinic or triclinic phase can be expected.…”

Section: Introductionmentioning

confidence: 99%

Thin film solar cells based on the ternary compound Cu2SnS3

et al. 2012

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Alongside with Cu 2 ZnSnS 4 and SnS, the p-type semiconductor Cu 2 SnS 3 also consists of only Earth abundant and low-cost elements and shows comparable opto-electronic properties, with respect to Cu 2 ZnSnS 4 and SnS, making it a promising candidate for photovoltaic applications of the future. In this work, the ternary compound has been produced via the annealing of an electrodeposited precursor in a sulfur and tin sulfide environment. The obtained absorber layer has been structurally investigated by X-ray diffraction and results indicate the crystal structure to be monoclinic. Its optical properties have been measured via photoluminescence, where an asymmetric peak at 0.95 eV has been found. The evaluation of the photoluminescence spectrum indicates a band gap of 0.93 eV which agrees well with the results from the external quantum efficiency. Furthermore, this semiconductor layer has been processed into a photovoltaic device with a power conversion efficiency of 0.54 %, a short circuit current of 17.1 mA/cm 2 , a open circuit voltage of 104 mV hampered by a small shunt resistance, a fill factor of 30.4 %, and a maximal external quantum efficiency of just less than 60 %. In addition, the potential of this Cu 2 SnS 3 absorber layer for photovoltaic applications is discussed.

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Raman analysis of monoclinic Cu2SnS3 thin films

Cited by 244 publications

References 13 publications

Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Thin film solar cells based on the ternary compound Cu2SnS3

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