Raman active phonon modes of cubic In<sub>2</sub>O<sub>3</sub>

Kranert, C.; Schmidt‐Grund, Rüdiger; Grundmann, Marius

doi:10.1002/pssr.201409004

Cited by 78 publications

(48 citation statements)

References 16 publications

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“…This large number of measured modes is higher than that reported for most of the C‐type sesquioxides . However, it is similar to the number of Raman‐active modes recently obtained in related bixbyite compounds such as In 2 O 3 …”

Section: Resultscontrasting

confidence: 63%

Lattice dynamics study of cubic Tb₂O₃

Ibáñez

Blázquez

Hernández

et al. 2018

J Raman Spectroscopy

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We report a joint experimental and theoretical study of the lattice dynamics of cubic Tb2O3. Up to 16 optical Raman‐active modes have been observed with polarized and unpolarized Raman scattering measurements on a high‐quality Tb2O3 single crystal. The measured wavenumbers have been compared with those of other rare‐earth (RE) and related sesquioxides with cubic (C‐type or bixbyite) structure. First‐principles calculations have allowed us to assign the symmetry of the experimentally observed Raman‐active modes. Additional lattice‐dynamical calculations on the related cubic RE sesquioxides Dy2O3, Gd2O3, Eu2O3, and Sm2O3 indicate that the phonon wavenumbers of the Raman‐active modes in these compounds are monotonically reduced with increasing the lattice parameter along the Dy2O3‐Tb2O3‐Gd2O3‐Eu2O3‐Sm2O3 series, thus prompting for a revision of the experimental Raman spectra of some of these compounds (mainly Eu2O3 but also Gd2O3).

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Section: Resultscontrasting

confidence: 63%

Lattice dynamics study of cubic Tb₂O₃

Ibáñez

Blázquez

Hernández

et al. 2018

J Raman Spectroscopy

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“…22 As mentioned above, from the structural point of view, this phase shows no similarity to rh-In 2 O 3 . [22][23][24][25] The electronic structure of InGaO 3 -II is not known so far, but it seems that the optical response and thus also the electronic structure of that phase should be similar to that of the rh-In 2 O 3 phase.…”

Section: (B) a Clear Increase Of N(e)mentioning

confidence: 99%

“…It shall be mentioned that the two rhombohedral phases not only differ in stoichiometry, but are two different crystal structures with regard to yet known structural and phonon mode properties. [22][23][24][25] The highest valence bands of b-Ga 2 O 3 consist mainly of O 2p orbitals, 2-4 which for bcc-and rh-In 2 O 3 are hybridized with In 4d (Refs. 5-7)/In 5p (Ref.…”

Section: Introductionmentioning

confidence: 99%

Dielectric function in the NIR-VUV spectral range of (InxGa1−x)2O3 thin films

Schmidt‐Grund

Kranert

Böntgen

et al. 2014

Journal of Applied Physics

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“…Several different p-type layers were used within heterostructures including NiO, [6][7][8][9] SrCu 2 O 2 , [ 10,11 ] AlGaN, [ 12 ] Si, [ 13 ] diamond, [ 14 ] ZnRh 2 O 4 , [ 15 ] ZnCo 2 O 4 , [ 9,16 ] AlCo 2 O 4 , [ 17 ] CuAlO 2 , [ 18 ] Cu 2 O, [ 19,20 ] and CuI. Recently, interest in the semiconducting properties of crystalline In 2 O 3 layers [24][25][26][27][28] and bulk crystals [29][30][31] arose for fundamental reasons but also to exploit the potential of In 2 O 3 in electronic devices. [ 18,23 ] Besides ZnO, oxides like TiO 2 , β -Ga 2 O 3 or In 2 O 3 are of high scientifi c interest as well.…”

Section: Introductionmentioning

confidence: 99%

pn‐Heterojunction Diodes with n‐Type In₂O₃

Wenckstern

Splith

Lanzinger

et al. 2015

Adv Elect Materials

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contact metals, diodes with rectifi cation suffi cient for material characterization were reported. [ 33 ] Nevertheless, rectifi cation has to be improved considerably to exploit In 2 O 3 within detectors or transistors. The realization of pn-heterodiodes is an alternative approach toward rectifying devices and was successful for the case of ZnO as n-type layer as mentioned above. As recently demonstrated, ZnCo 2 O 4 and NiO are especially interesting as p-type layer since they can be deposited at room temperature on the n-type oxide and offer very high rectifi cation up to ten orders of magnitude. [ 9 ] We report on the electric properties of p-ZnCo 2 O 4 /n-In 2 O 3 (ZCO/InO) and p-NiO/n-In 2 O 3 (NiO/InO) heterodiodes investigated at room temperature (RT) by current-voltage (IV), capacitance-voltage (CV) measurements and admittance spectroscopy. Additionally thermal admittance spectroscopy (TAS) was performed on a selected diode. Results and DiscussionA wide-angle X-ray diffraction pattern of a nominally undoped-In 2 O 3 thin fi lm is depicted in Figure 1 . On the (001)YSZ substrates, the In 2 O 3 thin fi lm grows expectedly in [001] direction. This is in-line with investigations of MBE-grown In 2 O 3 layers on (001)YSZ. [ 34 ] An infl uence of the In 2 O 3 :Mg surface layers on the XRD pattern was not observed. Atomic force microscopy showed that all samples are compact, without voids and without faceting. The surface morphology depicted in Figure 2 for a sample without In 2 O 3 :Mg surface layer is similar to that reported by Bierwagen et al. for a thin fi lm (labeled S7) grown by MBE under In-rich conditions at 650 °C (with nucleation layer grown at 600 °C). [ 35 ] For our PLD-grown thin fi lm of Figure 2 the root mean square roughness is about 4 nm and suffi ciently low for growth of pn-heterodiodes.The free electron concentration of our nominally undoped-In 2 O 3 thin fi lms was obtained from Hall effect measurements and is with 3 × 10 18 cm −3 rather high for creating diodes thereon. For such high doping, the extension of the space charge region is small and tunneling currents are likely contributing to current transport across the interface. A reduction of the doping density close to the surface should increase the space charge layer width making tunneling less likely. This should result in smaller leakage currents but may also increase the series resistance of the diodes. Sample series with compensated In 2 O 3 :Mg layers with thickness d of 0, 10, and 100 nm pn-Heterodiodes comprising the wide bandgap semiconducting oxide In 2 O 3 and amorphous p-conducting NiO or ZnCo 2 O 4 are realized. In 2 O 3 is grown at 600 °C and the amorphous p-type oxides at room temperature by pulsedlaser deposition. Highest rectifi cation of about four orders of magnitude is observed for structures with Mg-doped In 2 O 3 layers having lower carrier density than undoped layers. The p-ZnCo 2 O 4 /n-In 2 O 3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p-NiO/n-In 2 O 3 diodes degrade irreversi...

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Raman active phonon modes of cubic In₂O₃

Cited by 78 publications

References 16 publications

Lattice dynamics study of cubic Tb₂O₃

Lattice dynamics study of cubic Tb₂O₃

Dielectric function in the NIR-VUV spectral range of (InxGa1−x)2O3 thin films

pn‐Heterojunction Diodes with n‐Type In₂O₃

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Raman active phonon modes of cubic In2O3

Cited by 78 publications

References 16 publications

Lattice dynamics study of cubic Tb2O3

Lattice dynamics study of cubic Tb2O3

Dielectric function in the NIR-VUV spectral range of (InxGa1−x)2O3 thin films

pn‐Heterojunction Diodes with n‐Type In2O3

Contact Info

Product

Resources

About

Raman active phonon modes of cubic In₂O₃

Lattice dynamics study of cubic Tb₂O₃

Lattice dynamics study of cubic Tb₂O₃

pn‐Heterojunction Diodes with n‐Type In₂O₃