Radiologic Case Study

Singer, J. F.; Sundaram, Murali; Miller, Paul D.; Grana, William A.

doi:10.3928/0147-7447-19880801-14

Cited by 5 publications

(3 citation statements)

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“…The reaction is terminated by overflow quenching with cold DI water before the wafers are transferred to a flow rinse system with ultrafiltered DI water, followed by spin drying in a wafer centrifuge. Several types of refined wet bench immersion systems for automated processing are now available for large-scale production (17)(18)(19).…”

Section: Optional Processing Steps--a Preliminary Clean-upmentioning

confidence: 99%

“…The chemical cleaning efficiency, according to FSI, is comparable with that of immersion, but particles are removed more efficiently. Improved versions of this system (20) and other types of spray processing machines (17)(18)(19) are widely used but tend to require considerable maintenance.…”

Section: Centrifugal Spray Cleaning--in 1975 Fsi Corporationmentioning

confidence: 99%

“…Of particular interest, in the present paper, is the application of thin TiN films to silicon device technology. Because of the concern about exposure of circuits to high temperature processes, barrier films deposited by physical vapor techniques such as low temperature reactive sputtering (13)(14)(15)(16)(17)(18)(19)(20)(21)(22) have been employed. However, as integrated circuit feature sizes shrink to submieron dimensions, the ability of physical techniques to uniformly coat high aspect ratio vias has become a concern.…”

Section: Growth and Properties Of Lpcvd Titanium Nitride As A Diffusi...mentioning

confidence: 99%

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The Evolution of Silicon Wafer Cleaning Technology

Kern

1990

J. Electrochem. Soc.

1,510

801

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The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by "slow-pull" out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989.

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Section: Optional Processing Steps--a Preliminary Clean-upmentioning

confidence: 99%

Section: Centrifugal Spray Cleaning--in 1975 Fsi Corporationmentioning

confidence: 99%