Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Chou, C.; Lai, Ching-Yi; Chang, Chir-Weei; Wen, Kai-Shin; Hsiao, Vincent K. S.

doi:10.1063/1.4994677

Cited by 11 publications

(5 citation statements)

References 44 publications

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“…As shown in Figure 2b and reported in other studies, adding the RF-plasma to PLD results in a higher flux and kinetics of the expanding plume. [36,37] Therefore, applying RF plasma reduces the interaction time of Ti adatoms/clusters with the N 2 background gas and consequently, the condensed NPs cover the surface of MWCNT without the formation of aerosol-like structures. As seen in Figure 1e,f, aerosol-like structures are less present due to the lower extent of nanoparticle agglomeration, and a rough film is formed on the surface of MWCNTs at 1.0 Torr after applying RF plasma at 30W.…”

Section: Tio X N Y /Mwcntmentioning

confidence: 99%

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Pajootan

Alolabi

Omanovic

et al. 2022

Adv Materials Technologies

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ance electrocatalytic activity and fuel cell costs. [1,2] Downsizing Pt to nanoparticles (NPs) is one of the practical approaches to lower its loading, while significantly enhancing its activity. However, the parallel problems are the complexity of the Pt NPs synthesis process and their aggregation during the ORR, limiting their range of practical applications. Introducing a support material for Pt can enhance the activity and stability of Pt NPs by enabling strong metal-support interactions. [3][4][5] Owing to their wealth of properties, transition metal nitrides, especially titanium nitride (TiN) and titanium oxynitride (TiO x N y ), have become essential technological materials, offering highly desirable properties such as hardness, excellent wear resistance, high melting point, thermodynamic stability, electrical conductivity, and corrosion resistance. Thin films of these materials have drawn considerable attention for use as coating materials for various applications such as cutting and drilling tools, diffusion barriers in integrated circuits, contact materials in semiconductors, and as catalyst supports for various heterogeneous reactions. [6][7][8][9][10][11] In addition, the thermodynamically-favorable formation of the native layer containing a mixture of oxide and oxynitride film on the surface of TiN makes it resistant to further oxidation. [12,13] TiN NPs are mainly produced by magnetron sputtering, atomic layer deposition, nitridation of titanium oxide by nitrogen sources such as ammonia or nitrogen at high temperature, and chemical vapor deposition (CVD) utilizing volatile precursors such as TiCl 4 . [9,[14][15][16] The latter, however, faces problems such as chlorine impurity incorporation and hightemperature requirements ( >600 °C). On the other hand, gasphase techniques are solvent-free routes toward synthesizing TiN at low temperatures. [17] With advances in continuous, highquality large-area film growth by pulsed laser deposition (PLD), more attention is directed toward using this method for thin film deposition. [18] PLD is an efficient gas-phase technique in which a focused short-pulse high-fluence laser beam is aimed at a target. The target absorbs the laser energy, and a rapid temperature increase occurs in the external layers of the target. This study reports on the fabrication and characterization of novel multilayered electrocatalyst nanostructures for the oxygen reduction reaction (ORR).Thin titanium oxynitride (TiO x N y ) coatings are deposited on a forest of multi-walled carbon nanotubes (MWCNTs), directly grown on a stainless-steel mesh, by capacitively coupled radiofrequency plasma-assisted pulsed laser deposition (RF-PAPLD) in a N 2 environment. The resulting high-surface-area binder-free electrode is further coated with a low quantity of well-dispersed Pt nanoparticles (NPs) by PLD in an inert atmosphere. High-speed imaging of the laser-induced plasma expansion provided evidence of a higher kinetics of the expanding plume at higher RF plasma powers, changing the morphology of the...

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Section: Tio X N Y /Mwcntmentioning

confidence: 99%

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Pajootan

Alolabi

Omanovic

et al. 2022

Adv Materials Technologies

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“…IGZO can be deposited by numerous techniques, including solution processing, − atomic layer deposition, − pulsed laser deposition, , physical vapor deposition (PVD), and mist-chemical vapor deposition . Postdeposition treatments include laser crystallization, rapid thermal annealing and conventional thermal annealing, and microwave annealing .…”

Section: Introductionmentioning

confidence: 99%

Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

Glushkova

Dekkers

Nag

et al. 2021

ACS Appl. Electron. Mater.

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In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high performance and high stability, we optimize sputtering conditions to create devices based on different IGZO phases: amorphous, c-axis-aligned crystalline (CAAC), and a transition between them, which is introduced here as protocrystalline IGZO. For this, we study the performance of TFTs based on thin films of IGZO sputtered at different substrate temperatures T sub and oxygen flow ratios R O2 . While T sub is the principal phase-determining parameter, R O2 can be further optimized to enhance IGZO TFT characteristics. For both amorphous IGZO and CAAC IGZO, the best TFT performance and the best TFT bias stress stability are found under different sputtering conditions. In contrast, the protocrystalline IGZO shows a convergence of the highest TFT performance and the best bias stress stability, observed for an IGZO film sputtered at T sub = 200 °C and R O2 = 20%.

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“…Capacitive coupled plasma (CCP) assistant technique has been developed to effectively reduce the deposit temperature and boost the thin film quality in chemical vapor deposition (CVD) [6]- [8] and pulsed laser deposition (PLD) [9]. Up to now, there is no report about utilization of capacitive coupled plasma assistant in magnetron sputtering process to fabricate the high-performance a-IGZO transistors at low temperature.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Liu

Sun

Qin

et al. 2019

IEEE Electron Device Lett.

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This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 • C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm 2 /Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I ON /I OFF of more than 10 7. The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices. Index Terms-Capacitive coupled plasma assistant magnetron sputtering, low temperature, high performance, a-IGZO, thin film transistors.

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Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Cited by 11 publications

References 44 publications

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

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Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Cited by 11 publications

References 44 publications

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiOxNy Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiOxNy Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

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Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction

Radiofrequency Plasma‐Assisted Pulsed Laser Deposited Pt/TiO_xN_y Coatings on Multi‐Walled Carbon Nanotubes as Gas Diffusion Electrodes for the Oxygen Reduction Reaction