Radio Frequency Microelectromechanical Systems (<scp>RF</scp><scp>MEMS</scp>)

Nordquist, Christopher; Olsson, Roy H.

doi:10.1002/047134608x.w8229

Cited by 6 publications

(3 citation statements)

References 154 publications

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“…The equivalent electrical circuit for the fixed and switched resonators and the governing equations for the motional inductance, capacitance, and resistance as a function of the center frequency f res , quality factor Q, and coupling coefficient K 2 are shown in figure 9 [21]. The equivalent circuit parameters for fixed and switched resonators in the on-and off-states are shown in table 1.…”

Section: Equivalent Circuit Parametersmentioning

confidence: 99%

MEMS switching of contour-mode aluminum nitride resonators for switchable and reconfigurable radio frequency filters

Nordquist

Branch

Pluym

et al. 2016

J. Micromech. Microeng.

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Switching of transducer coupling in aluminum nitride contour-mode resonators provides an enabling technology for future tunable and reconfigurable filters for multi-function RF systems. By using microelectromechanical capacitive switches to realize the transducer electrode fingers, coupling between the metal electrode finger and the piezoelectric material is modulated to change the response of the device. On/off switched width extensional resonators with an area of <0.2 mm2 demonstrate a Q of 2000, K2 of 0.72, and >24 dB switching ratio at a resonator center frequency of 635 MHz. Other device examples include a 63 MHz resonator with switchable impedance and a 470 MHz resonator with 127 kHz of fine center frequency tuning accomplished by mass loading of the resonator with the MEMS switches.

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Section: Equivalent Circuit Parametersmentioning

confidence: 99%

MEMS switching of contour-mode aluminum nitride resonators for switchable and reconfigurable radio frequency filters

Nordquist

Branch

Pluym

et al. 2016

J. Micromech. Microeng.

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“…where 4f s is the full width at half maximum (FWHM) of the impedance at the series resonance frequency. The FoM describes the contrast in the resonator impedance observed at the series resonance frequency to that observed far from resonance and is crucial for assessing the trade-off between the minimum filter insertion loss and the filter isolation when using MSWRs to form filters 47 . Fig.…”

Section: Magnetostatic Wave Resonator (Mswr)mentioning

confidence: 99%

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

Du,

Idjadi,

Ding

et al. 2024

Nat Commun

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A single tunable filter simplifies complexity, reduces insertion loss, and minimizes size compared to frequency switchable filter banks commonly used for radio frequency (RF) band selection. Magnetostatic wave (MSW) filters stand out for their wide, continuous frequency tuning and high-quality factor. However, MSW filters employing electromagnets for tuning consume excessive power and space, unsuitable for consumer wireless applications. Here, we demonstrate miniature and high selectivity MSW tunable filters with zero static power consumption, occupying less than 2 cc. The center frequency is continuously tunable from 3.4 GHz to 11.1 GHz via current pulses of sub-millisecond duration applied to a small and nonvolatile magnetic bias assembly. This assembly is limited in the area over which it can achieve a large and uniform magnetic field, necessitating filters realized from small resonant cavities micromachined in thin films of Yttrium Iron Garnet. Filter insertion loss of 3.2 dB to 5.1 dB and out-of-band third order input intercept point greater than 41 dBm are achieved. The filter’s broad frequency range, compact size, low insertion loss, high out-of-band linearity, and zero static power consumption are essential for protecting RF transceivers from interference, thus facilitating their use in mobile applications like IoT and 6 G networks.

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“…In general, the off-state isolation of the switch is primarily determined by the contact and substrate capacitances, whereas the on-state insertion loss is determined by the contact resistance. For both cases, body inductance is negligible compared to the other parameters, thus resulting in a low reactance value (ωL) at an operating frequency range between 0-50 GHz [29].…”

Section: Electromagnetic Modeling and Rf Characteristics Of Ohmic Mem...mentioning

confidence: 99%

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

Basu

Adams

McGruer

2016

J. Micromech. Microeng.

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Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs.

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Radio Frequency Microelectromechanical Systems (RFMEMS)

Cited by 6 publications

References 154 publications

MEMS switching of contour-mode aluminum nitride resonators for switchable and reconfigurable radio frequency filters

MEMS switching of contour-mode aluminum nitride resonators for switchable and reconfigurable radio frequency filters

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

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