Radio-frequency characteristics of graphene oxide

Abstract

Effect of subphase pH on Langmuir-Blodgett deposition of graphene oxide monolayers on Si and SiO 2 /Si substrates AIP Conf. Proc. 1512, 708 (2013); 10.1063/1.4791234 Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors J. Appl. Phys. 112, 033701 (2012); 10.1063/1.4739486 High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures Appl. Phys. Lett. 94, 053110 (2009);

Energy‐Dependent Spectral Analysis of Photon‐Assisted Carrier Transport at Resonance in Graphene Oxide

“…GO consists of piled flakes, and the capacitive behavior in each layer and at the edges dominates the inductive behavior. In the transmission line analyzed via the S ‐parameters, the capacitive component normally increased with the frequency, whereas the inductance showed an opposite trend . The correlation of both the effects produces sudden changes at a particular frequency, which is 4.9 GHz in our system.…”

“…The experimental system containing GO and the substrate can be described using a telegraph model of equivalent circuits (Figure S2, Supporting Information), as discussed below. Similar to the transport of electrical signals via a transmission line, an electrical signal through GO experiences resistance, inductance, shunt conductance, and shunt capacitance . The absence of covalent bonds between individual GO flakes produces a capacitive effect.…”

Cover Picture: (ChemElectroChem 5/2015)

“…In previous studies of graphene interconnects, however, mechanically exfoliated graphene or CVD‐grown graphene flakes were applied up to lengths of dozens of micrometers. And metal electrodes were deposited for probing, resulting in a low‐carrier mobility, high contact resistance, and unexpected parasitic effects in the high frequency region 7–10. Thus, a de‐embedding process was inevitable to remove parasitic effects between the metal electrode and graphene in the high frequency region.…”

Microwave transmission characteristics of ZnO nanowire

“…4c and d. Intrinsic inductance shown in Fig. 4e tends to decrease as frequency increases by induced eddy current in the ZnO nanowire and in the silicon substrate [4]. Impedance Z with experimental data and model data are compared in Fig.…”

“…Highly resistive silicon with 500 nm SiO 2 substrate has been adopted for high frequency measurement [4]. S-parameter measurement shows the data range between open sample and short sample for both S 11 and S 21 values in Figs.…”