Radiative Recombination Features of Metastable Quantum Dot Array

Talalaev, V. G.; Novikov, B. V.; Gobsch, G.; Goldhahn, R.; Stein, N.; Tomm, Jens W.; Maaßdorf, A.; Cirlin, G. É.; Petrov, V. N.; Ustinov, V. M.

doi:10.1002/1521-3951(200103)224:1<101::aid-pssb101>3.0.co;2-v

Cited by 5 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a high‐density array, the observed temperature dependence of PL revealed a significant carrier redistribution effect, whereas for the lower‐density array, no indication of the thermally induced carrier transfer was found. Similarly, quite different temperature behaviours for two QD groups were observed in the PL spectra of metastable QD arrays grown on vicinal substrates 17.…”

Section: Introductionmentioning

confidence: 80%

See 1 more Smart Citation

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Smirnov

Talalaev

Novikov

et al. 2009

phys. stat. sol. (b)

View full text Add to dashboard Cite

The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account excitonphonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays.

show abstract

Section: Introductionmentioning

confidence: 80%

“…The model was applied to describe the PL spectra of metastable InAs QD arrays grown on vicinal GaAs substrates 2, 17. TEM data show that due to the intermixing the indium content x in the QDs does not exceed 60%.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Smirnov

Talalaev

Novikov

et al. 2009

phys. stat. sol. (b)

View full text Add to dashboard Cite

show abstract

“…From the whole variety of QD OQD (about 15 arrays are studied), isolated QDs (IQD), that emerge on vicinal terraces at high degrees of their bundling with discontinuities of the layers on the steps should be especially noted. The interaction between such QDs is virtually absent [22,25]. On the contrary, the interaction between the QDs forming the molecule is highly pronounced [26].…”

Section: Resultsmentioning

confidence: 99%

Baric properties of InAs quantum dots

et al. 2008

View full text Add to dashboard Cite

-In the context of the deformation potential model, baric dependences of the energy structure of InAs quantum dots in a GaAs matrix are calculated. Under the assumption of the absence of interaction between the spherical quantum dots of identical sizes, the energy dependence of the baric coefficient of energy of the radiative transition in the quantum dot is determined. A similar dependence is also found experimentally in the photoluminescence spectra under uniform compression of the InAs/GaAs structures. Qualitative agreement between the theory and experiment as well as possible causes for their quantitative difference are discussed. It is concluded that such factors as the size dispersion, Coulomb interaction of charge carriers, and tunnel interaction of quantum dots contribute to this difference.

show abstract

“…17 Additionally, the use of vicinal surfaces can allow for lateral ordering of QDs. 18,19 The structure was finalized by a GaAs 70 nm cap layer.…”

mentioning

confidence: 84%

“…17 Additionally, the use of vicinal surfaces can allow for lateral ordering of QDs. 18,19 The structure was finalized by a GaAs 70 nm cap layer.We performed photoluminescence ͑PL͒ spectroscopy measurements on these eight samples under continuous wave and pulsed laser excitation. The sample grown on the 7°m isoriented substrate with a 1.4 ML InAs layer showed the narrowest emission linewidth and a low QD density, allowing to study single dots.…”

mentioning

confidence: 99%

Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

Perinetti

Akopian

Samsonenko

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

We report on optical studies of single InAs quantum dots grown on vicinal GaAs͑001͒ surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski-Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime measurements reveal an exciton lifetime of 500 ps. Polarization measurements show an exciton fine structure splitting of 15 eV and allow to identify the exciton and charged exciton transitions with linewidth as narrow as 23 eV. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3125430͔ Self-assembled quantum dots ͑QDs͒ proved an excellent system for the implementation of quantum bits 1-3 and as sources of single 4,5 and entangled photons. [6][7][8] The most common technique for growing self-assembled QDs, the Stranski-Krastanov ͑SK͒ method, allows for the fabrication of QDs with good optical properties; nearly lifetime limited linewidth of the optical transitions in these dots makes them suitable for single spin measurement 9 and two photon interference. 10 The ability of controlling the position of selfassembled QDs would allow for more complex devices, and different attempts 11,12 have been made in this direction. In particular a growth technique similar to the SK method has been used to produce rows of QDs ͑Ref. 13͒ on vicinal GaAs substrates. Although this technique gives some control on the lateral alignment of QDs, the study of the optical properties of such vicinal QDs has been limited to ensemble measurements so far. 14,15 In this letter, we present a study of the optical properties of single InGaAs QDs, grown on a vicinal GaAs substrate by molecular beam epitaxy ͑MBE͒. The low QD density required for addressing single dots has been achieved by selecting a substrate with suitable misorientation angle and by exploring the subcritical regime of InAs island formation. 16 The high resolution spectroscopic measurements presented in this letter, combined with polarization selective and time resolved measurements, give a first contribution in identifying optical transitions in single QDs of this kind.In order to grow samples with different QD sizes and densities, four substrates were mounted in the MBE reactor, namely an exactly oriented GaAs͑001͒ substrate and three GaAs͑001͒ vicinal substrates misoriented by 3°, 5°, and 7°t oward the ͓100͔ direction. After oxide layer desorption, a GaAs buffer layer was grown at 600°C to ensure the translation of multiatomic steps according to the substrate vicinality. A 10 period GaAs/AlGaAs superlattice was then grown to block carrier diffusion to and from the substrate. After growing a 100 nm thick GaAs layer, the substrate temperature was lowered to 485°C and 1.4 or 1.5 InAs monolayers were deposited at a rate of 0.05 ML/s. The growth was then interrupted for 20 s. During this time QDs formed in the subcritical regime, as the InAs layer thickness was below the 1.7 ML critical thickness for SK dot formation. Under the thermodynamically co...

show abstract

Radiative Recombination Features of Metastable Quantum Dot Array

Cited by 5 publications

References 11 publications

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Baric properties of InAs quantum dots

Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

Contact Info

Product

Resources

About