Abstract:In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n+)-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been propose… Show more
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