Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Dumont, H.; Auvray, Laurent; Monteil, Y.; Saidi, F.; Hassen, F.; Maâref, H.

doi:10.1016/s0925-3467(03)00140-x

Cited by 21 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, at low temperatures a theoretical (Varshni) model fails to fit the experimental data. At 10 K, the shift between theoretical and experimental values, may be due to the recombination of photogenerated carriers trapped by localized states within BGaAs as previously observed in GaAsN [14,15]. This phenomenon is observed in GaAsN, which exhibit an anomalous behaviour.…”

Section: Resultssupporting

confidence: 60%

Clustering effects in optical properties of BGaAs/GaAs epilayers

Hamila¹,

Saidi²,

Fouzri³

et al. 2009

Journal of Luminescence

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 60%

Clustering effects in optical properties of BGaAs/GaAs epilayers

Hamila¹,

Saidi²,

Fouzri³

et al. 2009

Journal of Luminescence

View full text Add to dashboard Cite

“…The PL peak blue shift with increasing temperature below 60 K for sample A, as shown in Fig. 2(a), has been reported in ternary (GaAsBi, 16 GaInP 2 , 17 and GaAsN 18 ), quantum well (QW) (GaSb/GaAs, 19 InAs/GaSb, 20 and GaAsSbN/GaAs 21,22 ) and SL (InAs/GaSb, 23 InGaAs/GaAsSb, 24 InGaN/AlGaN 25 ) materials. Two explanations have been assigned to this behavior in the literature.…”

Section: Discussionsupporting

confidence: 61%

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Steenbergen

Massengale

Ariyawansa

et al. 2016

Journal of Luminescence

View full text Add to dashboard Cite

The temperature-dependent and excitation-dependent photoluminescence (PL) spectroscopy characterization of mid-wavelength infrared InAs/InAs 1-x Sb x type-II superlattices reveals evidence of carrier localization. Carrier localization is apparent in the 8 meV PL peak position blue shift from 4 K to 60 K while the peak full-width-at-half-maximum is non-monotonic, peaking at 25 K before increasing above 60 K. In addition, competition between two recombination processes is evident in the temperature-dependent behavior of the PL peak integrated intensity under low excitation conditions: the intensity decreases from 4 K to 80 K, increases from 80 K to 160 K, and decreases above 160 K. Excitation-dependent PL studies reveal the dominant recombination mechanism changes from free-tobound or donor-acceptor-like recombination to excitonic or band-to-band recombination at ~60 K. These findings suggest that carrier localization is occurring below 60 K, and the confined carriers are holes as these are unintentionally doped n-type superlattices. The localization potentials are due to variations in the InAs 1-x Sb x composition, the interfaces, and the InAs and InAs 1-x Sb x layer widths. The width of a Gaussian distribution used to describe the density of states of the band tails due to carrier localization potentials ranges from 2 meV to 4 meV. The larger energy corresponds to the smaller period superlattices, indicating the interface compositional variation is more prominent and creates larger localization potentials than in the longer period superlattices.

show abstract

“…We note that the PL peak energies decrease with temperature but the shift is smaller than observed in GaAs material [7] . An "S-Shape" phenomenon appears for the highly Si-doped sample(c) in the temperature range of 10-130 K; it is attributed to the recombination of photogenerated carriers trapped by localized states in GaAsN, as previously observed by Dumont et al [18] . The PL peak energies at high temperature were fitted using the BoseEinstein statistical expression [19] :…”

Section: Resultssupporting

confidence: 73%

Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping

Sédrine¹,

Hamdouni²,

Rihani³

et al. 2007

American J. of Applied Sciences

View full text Add to dashboard Cite

Abstract:The photoluminescence (PL) properties of Si-doped GaAs 0.985 N 0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs 1-x N x structure. The decrease of the activation energies with increasing silicon content was observed.

show abstract

Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Cited by 21 publications

References 17 publications

Clustering effects in optical properties of BGaAs/GaAs epilayers

Clustering effects in optical properties of BGaAs/GaAs epilayers

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping

Contact Info

Product

Resources

About