Radiative lifetime of a single electron-hole pair in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Al</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>quantum dots

Bretagnon, Thierry; Lefèbvre, Pierre; Valvin, Pierre; Bardoux, Richard; Guillet, Thierry; Taliercio, Thierry; Gil, Bernard; Grandjean, N.; Sèmond, F.; Damilano, B.; Dussaigne, Amélie; Massies, J.

doi:10.1103/physrevb.73.113304

Cited by 115 publications

(127 citation statements)

References 23 publications

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“…It also reduces the exciton binding energy by loosening the Coulomb attraction that controls the extension of their in-plane relative motion. These effects have been observed in QWs [20,21] based on wurtzite group-III. Two regimes can be defined: -For narrow QWs, the quantum confinement dominates; the emission energy is above the band gap and typical excitonic lifetimes of nanoseconds.…”

Section: Introductionmentioning

confidence: 80%

Optical properties of ZnO/(Zn, Mg)O quantum wells

Bretagnon

2014

Turk J Phys

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This paper reviews the optical properties of ZnO/(Zn, Mg)O single quantum wells grown by molecular beam epitaxy. Both heteroepitaxial quantum well growth along the polar c-direction and homoepitaxial quantum well growth on the nonpolar M plane cases are considered. The optical properties of these quantum wells are investigated by using reflectance, continuous wave photoluminescence, and time-resolved photoluminescence spectroscopies. The quantum-confined Stark effect dominates the properties of the excitons for polar quantum wells. The magnitude of the internal electric field that is induced by both spontaneous and piezoelectric polarizations is determined by comparing the experimental results with a variational calculation of excitonic energies and lifetimes. For nonpolar quantum wells, the optical spectra reveal strong in-plane optical anisotropies, as predicted by the group theory. Moreover, the radiative recombination of free excitons is dominating the quantum well photoluminescence even at room temperature.

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Section: Introductionmentioning

confidence: 80%

Optical properties of ZnO/(Zn, Mg)O quantum wells

Bretagnon

2014

Turk J Phys

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“…Such an electric field can no longer be treated as a perturbation of the confined electrons and holes in the QD. In fact, it leads to a Stark shift of the transition energy to smaller energies and to large time constants of the radiative recombination of up to ms [5,45].…”

Section: Optical Properties Of Ingan/gan Quantum Dotsmentioning

confidence: 99%

Optical Properties of III–V Quantum Dots

Pohl¹,

Rodt²,

Hoffmann³

2008

Semiconductor Nanostructures

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“…In NW geometries, the 3D elastic strain relaxation via the surface in the form of plane bending [15] permits a wider range of quantum dot sizes and compositions before forming misfit dislocations, i.e., plastic relaxation [15,16]. In the case of GaN/AlN quantum dots or nanodisks, the large band offsets (∼1.8 eV in the conduction band [17]) provide efficient exciton confinement, so that the observed long (microsecond) photoluminescence (PL) decay times [9,12] can persist up to room temperature [18].…”

Section: Published By the American Physical Society Under The Terms Omentioning

confidence: 99%

“…In the case of polar materials, such as wurtzite III-nitride or II-oxide semiconductors [3,4], internal electric fields appear spontaneously in heterostructures due to the polarization difference between binary compounds [5]. In particular, adding up spontaneous and piezoelectric polarization, AlN/GaN quantum wells present an internal electric field on the order of 10 MV/cm [6], which leads to efficient electron-hole separation along the polar 0001 axis, and considerably increases the band-to-band radiative recombination time [7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Long-lived excitons in GaN/AlN nanowire heterostructures

et al. 2015

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

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Radiative lifetime of a single electron-hole pair inGaN∕AlNquantum dots

Cited by 115 publications

References 23 publications

Optical properties of ZnO/(Zn, Mg)O quantum wells

Optical properties of ZnO/(Zn, Mg)O quantum wells

Optical Properties of III–V Quantum Dots

Long-lived excitons in GaN/AlN nanowire heterostructures

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