Radiative decay in compound semiconductors

Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection‐Rule Breaking

“…It is known that high densities of structural defects could lead to phonon-localization effects. [3,7,8] Our results provide direct confirmation that silicon structural defects are indeed present, enabling phonon-localization by breaking of the long-range crystal symmetry and, thereby, enhancing radiative recombination observed at room temperature in the periodically nanopatterned crystalline silicon structures. It is worth noting that some of these structural defects, such as A-centers, are emissive themselves.…”

“…However, this so-called phonon-selection rule can be relaxed or broken by crystal-symmetry breaking or phonon localization, [3,4] which could be generated in lowdimensional silicon nanostructures, [4][5][6] or by high defect-center or dislocation concentration in crystalline silicon. [3,7,8] Phonon confinement in silicon nanocrystals has been experimentally studied and is now relatively well understood.…”

“…However, this so-called phonon-selection rule can be relaxed or broken by crystal-symmetry breaking or phonon localization, [3,4] which could be generated in lowdimensional silicon nanostructures, [4][5][6] or by high defect-center or dislocation concentration in crystalline silicon. [3,7,8] Phonon confinement in silicon nanocrystals has been experimentally studied and is now relatively well understood. [6,[9][10][11][12] Recent studies of periodic, uniaxially nanopatterned, crystalline silicon structures on silicon-on-insulator (SOI) have previously shown laserlike characteristics at 1278 nm and cryogenic temperatures; these characteristics were attributed to A-center-mediated phononless recombination.…”

Enhancement of photoluminescence of Ge/GeO 2 core/shell nanoparticles

“…The Raman peak centered at 296 cm −1 with a FWHM of 12.5 cm −1 . It is known that high densities of structural defects could lead to phonon localization effects [20][21][22]. Since we use the same laser power to excite the two samples, an additional downshift and broadening of the phonon line induced by the laser-induced heating can be excluding [23,24].…”

Photoluminescence of a Dense Quasi‐2D Electron‐Hole System in a Modulation‐Doped Heterostructure with Strained InGaAs QW

“…Re C describes the renormalizations of the noninteracting electron and hole dispersion laws and Im Ce,h(k, E ) represents the damping of the one-particle states in the dense e-h system. The physical meaning of the damping is connected with Auger processes resulting from the three-particle collisions [9]. I) SU-142432 Chernogolovka, Moscow district, USSR. '…”