Radiative and nonradiative processes in the optical cycle of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msubsup><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math>center in LiF

Baldacchini, G.; Cremona, M.; D'Auria, G.; Montereali, Rosa Maria; Калинов, В. С.

doi:10.1103/physrevb.54.17508

Cited by 48 publications

(14 citation statements)

References 22 publications

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“…The spectrum shown in Fig. 3 was recorded in two segments and joined together, which is revealed by a discontinuity at 615 nm.All these centers were known to occur in LiF [1][2][3][4][5][6][7][8][9]. The material exhibited bright orange emission on exposure to Ar ion or a dye laser even at room temperature.…”

Section: Absorption and Emission Spectramentioning

confidence: 99%

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Persistent spectral hole burning studies of F2 color center in lithium fluoride

Conway

Reddy

Kalluru

2004

Journal of Luminescence

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Section: Absorption and Emission Spectramentioning

confidence: 99%

“…Conventional spectroscopy of this material was done extensively [1][2][3][4][5][6]. The nature of the induced centers depends on the type of radiation and dosage used as well as on the temperature of the material during exposure [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Persistent spectral hole burning studies of F2 color center in lithium fluoride

Conway

Reddy

Kalluru

2004

Journal of Luminescence

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“…Lithium Fluoride (LiF) has lots of applications in the fields of tunable color center lasers, radiation dosimeters, optical isolators and in other wide range of opto-electronic devices. Ion induced effects in LiF has been studied, mostly in the form of bulk [1][2][3][4][5][6]. Aim of the present work is to study the effect of SHI irradiation on nanometer sized LiF thin films.…”

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confidence: 98%

Swift heavy ion induced effects in LiF thin films

Kumar

Singh

Khan

et al. 2007

Phys. Status Solidi (c)

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Swift heavy ions induced effects on optical (color centers), structural and surface (electronic sputtering and morphology) modifications, in nano-grains LiF thin films were studied by glancing angle X-ray diffraction, optical absorption, photoluminescence and elastic recoil detection analysis techniques. Our results show that grain size and irradiation temperature play a crucial role in materials modifications as a function of fluence for the selected ion beam parameters. Also for the first time, lamellae formation was observed in LiF thin films after a high fluence irradiation of 5×10 13 ions/cm 2 at liquid nitrogen temperature with 120 MeV Ag ions irradiation under grazing incidence (~10°).1 Introduction The bombardment of solid surfaces by ionizing radiation has great deal of attraction due to many interesting fundamental and technical aspects of ion beam induced effects. Ionizing irradiation is known for synthesis, modifications and characterization of materials. The ions having kinetic energy in the range of few MeV/u, known as swift heavy ions (SHI), interact with the target materials mainly via electronic excitation resulting in interesting effects on physical and chemical properties of the materials. Lithium Fluoride (LiF) has lots of applications in the fields of tunable color center lasers, radiation dosimeters, optical isolators and in other wide range of opto-electronic devices. Ion induced effects in LiF has been studied, mostly in the form of bulk [1][2][3][4][5][6]. Aim of the present work is to study the effect of SHI irradiation on nanometer sized LiF thin films. In case of thin films, the structural and optical properties are strongly influenced by growth and irradiation parameters. Therefore, it would be interesting to study the SHI induced effects like color centers (CCs), electronic sputtering (i.e. the removal of target materials) and surface restructuring in nanometer sized thin films of LiF.

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“…In lithium fluoride (LiF), PL arises mainly due to the defects induced in it. LiF is highly sensitive to electronic excitation leading to generation of color centers (CCs) and can be used as an optoelectronic material having great applications in the fields of radiation dosimetry, optical isolators, detector for ionizing radiation, high-power laser amplification and in the generation of ultra-short pulses [1][2][3]. LiF thin films contaning various optically active CCs can be used in tunable laser technology [4] and find applications in areas such as fiber optics and molecular spectroscopy [5].…”

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confidence: 99%