Radiative and non-radiative recombination in amorphous silicon

Engemann, D.; Fischer, R.

doi:10.1063/1.30783

Cited by 16 publications

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“…. It has also been shown that annealing of a-Si:H films in the temperature range' 100°C -650°C results in changes in paramagnetic defect densities and evolution of hydrogen ' accompinied by changes in the Si-H vibrational spectraJ2s3) It is the purpose of this letter to report proton magnetic resonance data from similarly annealed samples that indicate: (1) that hydrogen diffusion occurs in the dilute phase coincident with the paramagnetic center density reduction, (2) that hydrogen transfer from the heavily clustered to the .dilute phase occurs at the onset .of evolution, and (3) that evolution at low, (<400°C) temperatures occurs exclusively from the heavily clustered phase independent of the species identified from vibrational spectroscopy as being reduced in density by annealing.…”

Section: (5)doping and Compensationmentioning

confidence: 92%

Structural and electronic studies of defects in amorphous silicon. Technical progress report, March-May 1980

Street¹

1980

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The various research projects performed during this quarter are summarized as follows. We have collaborated with J. Reimer of Cal. Tech. in measurements of proton NMR to study the influence of annealing on the hydrogen environments of a-Si:H films. It was found that hydrogen diffuses internally before major evolution occurs, and that there is motion of hydrogen from a heavily clustered phase to a dilute phase coincident with hydrogen evolution (see Appendix 1 for details). Measurements of the excitation intensity dependence of the luminescence has shown that at low temperatures Auger recombination is an important non-radiative mechanism and is responsible for the increase in luminescence efficiency ofien observed between 10K and 50K. At higher temperatures the experiments demonstrate that the predominant non-radiative mechanism is the ionization of electron-hole pairs followed by capture at dangling bands (see Appendix 2 for details). (3)Structural Modifications a-Si:H samples have been deposited from SiH, diluted in the various inert gasses He, Ne, Ar and Kr. 'lhe structural and electronic properties of'the resulting films vary in a systematic way. In particular there is an increase in the extent of columnar growth which is undetectable in films deposited form pure SiH,, and most pronounced in the Kr-deposited samples. The electronic properties as observed by ESR and luminescence measurements also deteriorate with the heavier rare gasses. Kr-deposited material is 5.7- ; .

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Section: (5)doping and Compensationmentioning

confidence: 92%

Structural and electronic studies of defects in amorphous silicon. Technical progress report, March-May 1980

Street¹

1980

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“…Fig. 8 shows a model for the radiative transitions (11). The defect transition is assumed to occur after an electron has been captured from the conduction band by a dangling bond.…”

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LUMINESCENCE IN a-Si:H

Street

1981

J. Phys. Colloques

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Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in a-Si:H. The luminescence properties of a-Si:H are therefore very sensitive to the presence of dangling bonds.Non-radiative recombination is shown to occur by electron tunnelling at low temperature and by diffusion and capture at high temperature. The evidence for a weak radiative transition of electrons trapped at dangling bonds is discussed. The h~minescence properties of doped and compensated a-Si:H are shown to be dominated by the changes in dangling bond density.Introduction. -The inclusion of a tew percent of hydrogen during the deposition of amorphous silicon leads to a material with good semiconducting properties. The effect of hydrogen is to reduce the density of states in the gap, which in turn allows effective doping and results in long carrier lifetimes. Another consequence of the reduced gap state density is that efficient

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Amorphous silicon (a-Si) photoluminescence

Landolt-Börnstein - Group III Condensed Matter

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Radiative and non-radiative recombination in amorphous silicon

Cited by 16 publications

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Structural and electronic studies of defects in amorphous silicon. Technical progress report, March-May 1980

Structural and electronic studies of defects in amorphous silicon. Technical progress report, March-May 1980

LUMINESCENCE IN a-Si:H

Amorphous silicon (a-Si) photoluminescence

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