“…In silicon rectifying diodes (e.g. see section 1 in chapter II of part II of [1], [243,244], and also sections 6.5 and 6.8.1 of [33]), similarly to low-doped detectors, an increase of the fast-neutron fluence causes a decrease of the forward I -V characteristic. At large fluences, the I -V characteristic for both p-n and p-i-n rectifying diodes is approximatively expressed by equation (4.17), where C f ( n ), R f ( n ) and V f,c ( n ) depend on the dopant concentrations.…”