Radiation Tolerant Magnetic Amplifier

Frank, Martin J.; Poblenz, F. W.; Howard, D.W.

doi:10.1109/tns.1963.4323309

Cited by 2 publications

(1 citation statement)

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“…In silicon rectifying diodes (e.g. see section 1 in chapter II of part II of [1], [243,244], and also sections 6.5 and 6.8.1 of [33]), similarly to low-doped detectors, an increase of the fast-neutron fluence causes a decrease of the forward I -V characteristic. At large fluences, the I -V characteristic for both p-n and p-i-n rectifying diodes is approximatively expressed by equation (4.17), where C f ( n ), R f ( n ) and V f,c ( n ) depend on the dopant concentrations.…”

Section: Rectification Property Up To Large Fast-neutron Fluences At ...mentioning

confidence: 99%

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Section: Rectification Property Up To Large Fast-neutron Fluences At ...mentioning

confidence: 99%

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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A silicon transistor sense preamplifier designed for tolerance to greater than 10¹⁶Nvt

Shafer

Lynch²

1964

1964 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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Radiation Tolerant Magnetic Amplifier

Cited by 2 publications

References 1 publication

Particle interaction and displacement damage in silicon devices operated in radiation environments

Particle interaction and displacement damage in silicon devices operated in radiation environments

A silicon transistor sense preamplifier designed for tolerance to greater than 10¹⁶Nvt

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Radiation Tolerant Magnetic Amplifier

Cited by 2 publications

References 1 publication

Particle interaction and displacement damage in silicon devices operated in radiation environments

Particle interaction and displacement damage in silicon devices operated in radiation environments

A silicon transistor sense preamplifier designed for tolerance to greater than 1016Nvt

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A silicon transistor sense preamplifier designed for tolerance to greater than 10¹⁶Nvt