Radiation tolerance of single-sided microstrip detector with Si3N4 insulator

Маслов, Н.И.; Kulibaba, V.I.; Potin, S.M.; Starodubtsev, A I; Kuijer, P. G.; Haas, A.

doi:10.1016/s0920-5632(99)00625-8

Nuclear Physics B - Proceedings Supplements

1999

DOI: 10.1016/s0920-5632(99)00625-8

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Radiation tolerance of single-sided microstrip detector with Si3N4 insulator

Н.И. Маслов

V.I. Kulibaba

S.M. Potin

et al.

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Cited by 3 publications

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“…The latter circumstance was confirmed in experiments where the atomic smooth points prepared by the gas stimulated field evaporation were used as probing con tacts in microstrip detectors [12]. The probing point was positioned at the center of a contact pad with dimensions about 40 × 50 µm.…”

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confidence: 82%

High-field formation of multipoint field-electron emitters

et al. 2012

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In recent years, the wide use of vacuum nanoelec tronic devices has stimulated the development of high efficiency field emitters. This interest is primarily due to the possibility of using these emitters as active ele ments in various ion and electro optical devices [1][2][3][4][5]. There is a general tendency toward the develop ment of technology for obtaining emitters operating at possibly low voltages, which is mostly ensured by reducing the radii of emitting points down to a nanometer level. In order to obtain significant ion and electron currents, there is a general trend toward man ufacturing field emission sources with developed sur faces-in particular, multipoint emitters. The main difficulties encountered in the implementation of these sources are related to the nonuniformity of emis sion [6]. Because of the mutual local screening, the average current per emitter decreases with an increase in their number so that the total emission current is not proportional to this number in the array.The existing high field methods used for decreas ing the dispersion of local field factors in multipoint emitter arrays are based on self consistent variation of the curvature radius at the point vertex depending on the mutual screening factor [5]. However, the effi ciency of these methods is significantly limited by the probability of emitter fracture and electric breakdown in the course of field evaporation [7]. The present Let ter demonstrates that the probability of increasing the efficiency of formation of field induced emission sources with developed (multipoint) surfaces can be increased due to the phenomenon of evaporation in a strong electric field, which is additionally simulated by the presence of active gases [8].Experiments were performed in a two chamber field ion microscope capable of imaging the emitter surface in field ion microscopy (FIM) and field elec tron microscopy (FEM) regimes [9]. The images were obtained using a microchannel detector with a lumi nescent screen. The residual gas pressure in the work ing chamber was about 10 -6 Pa. In order to resolve the emission images of separate point emitters, electron beams were contracted by placing the multipoint array in a homogeneous magnetic field of 0.8-1.5 T. The emitters were formed by electrochemical etching in 1 N aqueous sodium hydroxide solution. The field emission source was assembled as a linear array of point emitters that were spot welded to a tantalum base plate at a 2 mm step. The heights of emitters were spread within ±1 mm. The initial radii of curvature at the point vertices were within 7-15 nm. The average spread of local field enhancement factors was in excess of 50%.In order to reduce the variance of the local field enhancement factors and form an atomically smooth surface of emitters, we have used the method of low temperature field evaporation [5] based on the expo nential dependence of the rate of material evaporation from the emitter point tip on the electric field strength. The local field enhancement factors in multipoint emitter...

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High-field formation of multipoint field-electron emitters

et al. 2012

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Multichannel Coordinate-Sensitive X-Ray Detector System Based on a Silicon Integrated Technology

Perevertaylo¹

2013

Nauka innov.

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KHARKIV TEST PLATFORM FOR RESEARCH AND DEVELOPMENT OF Si SPECTROMETRIC PLANAR DETECTORS AND DETECTORS ARRAYS FOR MEDICAL APPLICATION

Kapliy¹,

Kiprich²,

Маслов³

et al. 2020

Problems of Atomic Science and Technology

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A universal test platform for research and development of planar radiation detectors for use in medicine has been created having the possibility of obtaining complete information about the characteristics of the detector before creating a detecting module with specialized electronics. 5 jobs were created with the ability to perform the following work: measurement of the electrophysical characteristics of individual detectors and selected detection elements of the matrices based on the station with manual movement of microprobes; determination of the yield of suitable detector elements of matrices using a test station with automated microprobe movement and automated collection and processing of electrophysical measurement data; measurement of the energy resolution (ER) of individual silicon detectors, “scintillator-silicon photosensor” type detectors and measurement of the ER of selected matrix elements before creating a detection module with specialized electronics.

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Radiation tolerance of single-sided microstrip detector with Si3N4 insulator

Cited by 3 publications

References 4 publications

High-field formation of multipoint field-electron emitters

High-field formation of multipoint field-electron emitters

Multichannel Coordinate-Sensitive X-Ray Detector System Based on a Silicon Integrated Technology

KHARKIV TEST PLATFORM FOR RESEARCH AND DEVELOPMENT OF Si SPECTROMETRIC PLANAR DETECTORS AND DETECTORS ARRAYS FOR MEDICAL APPLICATION

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