Radiation Testing of the CMOS 8085 Microprocessor Family

Sexton, F.W.; Anderson, Richard E.; Corbett, Wayne T.; Giddings, A. E.; Jorgensen, James L.; Kim, W. S.; Mnich, T. M.; Nordstrom, T. V.; Ochoa, A.; Sobolewski, Mark A.; Treece, R.K.; Wrobel, T. F.

doi:10.1109/tns.1983.4333114

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…Do the conversion of Hex to BCD for the number of times by the left most digits by adding 6d repeatedly. 4. The resultant value should be equal to the Decimal equivalent of Hex sum.…”

Section: Beker's Algorithm: Implementationmentioning

confidence: 99%

Beker’s Algorithm: An Efficient and Improved Architecture of DAA Instruction for Decimal Conversion in 8085 µp

2014

IJAERD

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Now a days so many clients are using 8085 simulators and real time programming platforms for educational and research applications. The beker's algorithm presented an enhanced architecture for DAA Decimal Adjust Accumulator instruction in 8085 microprocessor. To represent the processed data it is necessary to convert the hexadecimal data to BCD format after the arithmetic instructions. The DAA instruction does not offer a persistent and error free operation. The proposed algorithm corrected all these types of bugs and offers 100% precise result on arithmetic operations.

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“…Do the conversion of Hex to BCD for the number of times by the left most digits by adding 6d repeatedly. 4. The resultant value should be equal to the Decimal equivalent of Hex sum.…”

Section: Beker's Algorithm: Implementationmentioning

confidence: 99%

Beker’s Algorithm: An Efficient and Improved Architecture of DAA Instruction for Decimal Conversion in 8085 µp

2014

IJAERD

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show abstract

System Hardness Design

Messenger¹,

Ash²

1986

The Effects of Radiation on Electronic Systems

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Generation mechanisms of paramagnetic centers by gamma-ray irradiation at and near the Si/SiO2 interface

Awazu¹,

Watanabe

Kawazoe

1993

Journal of Applied Physics

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P b (⋅Si≡Si3) and E′ (⋅Si≡O3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes are obtained using three different oxidation methods to control the concentration of the hydrogen-related impurities. It is first observed that the concentration of Pb centers is decreased with increasing radiation dosage in samples with lower concentrations of impurities; the concentration dramatically increases in the samples with a higher concentration of impurities. The concentration of E′ centers also increases with accumulated dosage. When the Si/SiO2 structure is fabricated under different oxidation temperatures, the saturated concentrations of Pb centers after irradiation depend upon the oxidation temperature. The concentration of E′ centers increases with oxidation temperature after irradiation. When the Si/SiO2 structure is fabricated under different cooling rates, concentrations of the Pb centers are saturated after irradiation. The concentration of E′ centers increases with increasing cooling rate.

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Radiation Testing of the CMOS 8085 Microprocessor Family

Cited by 9 publications

References 5 publications

Beker’s Algorithm: An Efficient and Improved Architecture of DAA Instruction for Decimal Conversion in 8085 µp

Beker’s Algorithm: An Efficient and Improved Architecture of DAA Instruction for Decimal Conversion in 8085 µp

System Hardness Design

Generation mechanisms of paramagnetic centers by gamma-ray irradiation at and near the Si/SiO2 interface

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