1998
DOI: 10.1002/(sici)1521-3951(199807)208:1<137::aid-pssb137>3.3.co;2-i
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Radiation-Stimulated Conductivity of Some Alkali Halides Induced by 50 ps Electron Pulse Irradiation

Abstract: The conductivity of KCl, KBr, NaCl, CsI crystals excited by electron pulses (50 ps, 0.2 MeV) has been investigated. The current pulse for KCl, KBr and NaCl reproduces the form of the exciting impulse within the resolution ability of the recording system. The decay of the current pulse for CsI is about 1 ns and is described by the second-order kinetics. The coincidence of the current pulse decay time for CsI with the time of F-center creation enables us to identify this duration as the lifetime of the band elec… Show more

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Cited by 3 publications
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“…Diffusion coefficients for free electrons and holes as a function of temperature estimated by eq are presented in Figure . It is worth noting that the diffusion coefficient for free electrons in CsI obtained here for 300 K is 30 times lower than the estimate made in ref . As can be seen, the diffusion coefficient for free electrons and holes has the same order of magnitude between 40 and 300 K. It falls by an order of magnitude as the temperature goes down to 20 K. For the sake of simplicity, for the simulation we took D e = 0.01 cm 2 s –1 and D h = 0.004 cm 2 s –1 for the whole temperature range.…”
Section: Verification Of the Modelmentioning
confidence: 46%
“…Diffusion coefficients for free electrons and holes as a function of temperature estimated by eq are presented in Figure . It is worth noting that the diffusion coefficient for free electrons in CsI obtained here for 300 K is 30 times lower than the estimate made in ref . As can be seen, the diffusion coefficient for free electrons and holes has the same order of magnitude between 40 and 300 K. It falls by an order of magnitude as the temperature goes down to 20 K. For the sake of simplicity, for the simulation we took D e = 0.01 cm 2 s –1 and D h = 0.004 cm 2 s –1 for the whole temperature range.…”
Section: Verification Of the Modelmentioning
confidence: 46%
“…The mobility of non-relaxed electrons, holes and excitons in CsI is rather high. The mobility of electrons was estimated as µe=8 cm 2 /V s at room temperature [21]. According to the Einstein formula,…”
Section: Iii4 the Role Of The Mobility Of Electronic Excitationsmentioning
confidence: 99%
“…Thus for the relevant time range of these simulations the hole mobility in CsI can be taken as µ h = 0. The electron mobility in CsI at room temperature is µ e = 8 cm 2 /Vs, measured by a time‐of‐flight method after 20 ps electron pulse excitation 23. The static dielectric constant of CsI is ε = 5.65 24.…”
Section: Modeling the Competition Between Fast Carrier Diffusion Anmentioning
confidence: 99%