Radiation Stability of Nickel Doped Solar Cells

Исмайлов, К. А.; Kenzhaev, Z. T.; Koveshnikov, S.; Kosbergenov, E. Zh.; Ismaylov, B. K.

doi:10.1134/s1063783422040011

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…Samples of p-type single-crystal silicon with resistivity ρ=1 Ohm×cm and orientation (111), oxygen content N O2 ~( 4÷6) × 10 16 cm -3 and dislocation density S ≤ 10 3 cm 2 , were alloyed from a thin metal layer of nickel deposited in vacuum onto the surface of silicon samples [19][20][21][22].…”

Section: Technology For Obtaining Materials and Research Methodsmentioning

confidence: 99%

Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

Ismaylov

Zikrillayev

Исмайлов

et al. 2023

phst

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The formation of clusters of impurity atoms in the crystal lattice of semiconductor materials is of great interest. The formation of nanoclusters with controlled parameters in the lattice of semiconductor materials can serve as the basis for the technology of creating and obtaining bulk nanostructured semiconductor material. This paper shows the experimental results obtained, as well as the proposed physical model of the structure of nickel atomic clusters. It is shown that the clusters move and migrate in the crystal lattice of monosilicon with an anomalously high diffusion coefficient of about c (D ~ 10 -9 cm 2 /s at T = 800°C). The structural composition of clusters of impurity atoms is determined, its structure and the mechanism of migration in the crystal lattice are proposed. Thus, it was found that it is possible to control the state of impurity atom clusters in the silicon crystal lattice, obtaining a new type of semiconductor materials with unique functional and properties using the cluster migration process. This makes it possible to create a new class of photonic materials with bulk superlattices based on semiconductors with ordered clusters, which has unique functionality for creating optoelectronic, nanoelectronic, photoelectric devices and sensors of physical quantities of a new generation.

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Section: Technology For Obtaining Materials and Research Methodsmentioning

confidence: 99%

Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

Ismaylov

Zikrillayev

Исмайлов

et al. 2023

phst

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“…An example of such an impurity is nickel, which easily forms microclusters, precipitates, and silicides, due to which the nonelectroactive nickel concentration near the surface reaches 10 20 -10 21 cm -3 [8,9]. At the same time, the electroactive solubility of nickel does not exceed 10 16 cm -3 ; therefore, doping with nickel hardly changes the resistivity of the samples [10].…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

Zikrillayev,

Mavlonov,

Trabzon

et al. 2023

East Eur. J. Phys.

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One of the possible ways to obtain silicon with magnetic properties is the introduction of paramagnetic impurities into silicon: Cr, Mn, Fe, Ni, and Co. In our opinion, silicon materials containing magnetic nanosized clusters are most suitable for spintronic devices. The possibility of obtaining silicon with magnetic properties by diffusion doping was studied in this work. To obtain silicon doped with Cr, Mn, Fe and Ni impurity atoms, p-type single-crystal silicon with a specific resistance of ρ = 5 Ohm·cm and ρ = 0.5 Ohm·cm was used, and for doping with Co atoms, n-type silicon with resistivity ρ=10 Ohm·cm was used. The diffusion temperature and time were chosen such that, after diffusion annealing, the samples with impurity Cr, Fe, and Mn atoms remained highly compensated p-type, and when doped with impurity Co atoms, they remained high-resistance n-type. The results of the study showed that with decreasing temperature, the value of the negative magnetoresistance Δρ/ρ in the Si<Mn> samples increases and reaches its maximum value (about 800%) at T = 240 K, a further decrease in temperature leads to a decrease in the magnetoresistance, and at a temperature T = 170 K, the sign of the magnetoresistance is inverted. In Si <Cr> samples, with decreasing temperature, the positive magnetoresistance turns into a negative one, the value of which increases with decreasing temperature, and is achieved at T=100 K Δρ/ρ = 45–50%. In Si<Fe> samples, with decreasing temperature, the value of negative magnetoresistance increases monotonically and at T=100 K its value is Δρ/ρ = (100÷120) %. The study in Si<Сo> samples showed that with decreasing temperature the value of positive magnetoresistance increases and at Т=100 K it reaches Δρ/ρ = (17÷20) %. The study of magnetoresistance in samples - Si<Ni> showed that with decreasing temperature the value of positive magnetoresistance increases and at T=100 K it reaches Δρ/ρ = (10÷15) %. When studying the magnetic properties of p-Si <B, Mn> samples at low temperatures (below T=30 K), a ferromagnetic state was found, i.e. succeeded in obtaining a magnetic semiconductor material by the method of diffusion of a paramagnetic impurity. In the overcompensated Si <B, Mn> (n‑type) samples, no magnetic hysteresis was found. This shows a significant effect on the magnetic properties of the manganese impurity in silicon of its charge and, accordingly, spin state. Based on the results obtained, it can be argued that diffusion doping of silicon with manganese can be used to obtain silicon with magnetic properties.

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Radiation Stability of Nickel Doped Solar Cells

Cited by 2 publications

References 14 publications

Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

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