Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Tazzoli, Augusto; Cellere, G.; Autizi, E.; Peretti, V.; Paccagnella, A.; Meneghesso, G.

doi:10.1109/memsys.2009.4805462

Cited by 19 publications

(14 citation statements)

References 9 publications

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“…Confirming preliminary results shown in our previous work [17], the first result is the degradation of the insertion losses of tested devices, and an almost negligible dielectric charging. The second result concerns the comparison of the degradation induced by cycling and radiation stresses, with the aim of understanding if radiation stresses could be used as an accelerating mechanism in the study of MEMS reliability.…”

Section: Introductionsupporting

confidence: 89%

“…It is believed that the RF degradation is not due to an increase of the coplanar waveguide (CPW) or substrate losses, since repeating the measurements at different frequencies from 100 kHz to 6 GHz (also on simple CPW irradiated test structures) do not show any frequency-related dependence (more details can be found in [17]). Furthermore, in the off-state (0 V) RF parameters do not show any change.…”

Section: Resultsmentioning

confidence: 99%

“…As a particle loses energy into a material, it slows down, changing its linear energy transfer (the rate at which it transfers energy to the target material) and so the dose [19], but in this case the structure is very thin compared to the range of the radiation, making the surface approximation reasonable. More details on Monte Carlo (TRIM) simulation of displacement damage for 2 MeV protons on tested devices was shown in [17].…”

Section: Device Description and Measurement Setupmentioning

confidence: 99%

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Accelerated testing of RF-MEMS contact degradation through radiation sources

Tazzoli

Barbato

Giliberto

et al. 2010

2010 IEEE International Reliability Physics Symposium

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This work aims to propose a novel method to\ud accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar\ud degradation in electrical performances. Electrical measurements,\ud RF simulations, and AFM analysis of surface roughness were\ud carried out to verify the proposed method

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Section: Introductionsupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Device Description and Measurement Setupmentioning

confidence: 99%

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Accelerated testing of RF-MEMS contact degradation through radiation sources

Tazzoli

Barbato

Giliberto

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…Tazzoli et al [29] report on the effect of 2 MeV protons on ohmic RF switches. They observe an important degradation of insertion loss, but only a very small change in actuation voltage, and a complex post-irradiation behavior, with a surprising degradation during anneal (devices typically recover from radiation damage during annealing).…”

Section: Mechanical Failures Due To Displacement Damagementioning

confidence: 99%

Effects of radiation on MEMS

Shea

2011

SPIE Proceedings

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The sensitivity of MEMS devices to radiation is reviewed, with an emphasis on radiation levels representative of space missions. While silicon and metals generally do not show mechanical degradation at the radiation levels encountered in most missions, MEMS devices have been reported to fail at doses of as few krad, corresponding to less than one year in most orbits. Radiation sensitivity is linked primarily to the impact on device operation of radiation-induced trapped charge in dielectrics, and thus affects most strongly MEMS devices operating on electrostatic principles. A survey of all published reports of radiation effects on MEMS is presented. The different sensing and actuation physical principles and materials used in MEMS are compared, leading to suggested was to increase radiation tolerance by design, for instance by choice of actuation principle or by electrical shielding of dielectrics.

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“…Tazzoli et al 39 report on the effect of 2-MeV protons on ohmic rf switches, which are electrostatically operated. They observe an important degradation of insertion loss, but only a very small change in actuation voltage, and a complex postirradiation behavior, with a degradation during anneal.…”

Section: Mechanical Failures Due To Displacementmentioning

confidence: 99%

Radiation sensitivity of microelectromechanical system devices

Shea

2009

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The sensitivity of microelectromechanical system ͑MEMS͒ devices to radiation is reviewed, with an emphasis on radiation levels representative of space missions rather than of operation in nuclear reactors. As a purely structural material, silicon has shown no mechanical degradation after radiation doses in excess of 100 Mrad. MEMS devices, even when excluding control/readout electronics, have, however, failed at doses of only 20 krad, though some devices have been shown to operate correctly for doses greater than 10 Mrad. Radiation sensitivity depends strongly on the sensing or actuation principle, device design, and materials, and is linked primarily to the impact on device operation of radiation-induced trapped charge in dielectrics. MEMS devices operating on electrostatic principles can be highly sensitive to charge accumulation in dielectric layers, especially for designs with dielectrics located between moving parts. In contrast, thermally and electromagnetically actuated MEMS are much more radiation tolerant. MEMS operating on piezoresitive principles start to slowly degrade at low doses, but do not fail catastrophically until doses of several Mrad. A survey of all published reports of radiation effects on MEMS is presented, as well as a summary of techniques that can improve their radiation tolerance.

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Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Cited by 19 publications

References 9 publications

Accelerated testing of RF-MEMS contact degradation through radiation sources

Accelerated testing of RF-MEMS contact degradation through radiation sources

Effects of radiation on MEMS

Radiation sensitivity of microelectromechanical system devices

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