Radiation sensitive developable bottom anti-reflective coatings (DBARC) for 193nm lithography: first generation

Toukhy, Medhat A.; Oberlander, Joseph E.; Lu, Peng-Han; Neisser, Mark

doi:10.1117/12.717114

Cited by 6 publications

(3 citation statements)

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“…However, DBARC can be influenced by components and process conditions [32]. Toukhy and co-workers [33] demonstrate a first generation of methacrylate based DBARCs with promising results.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

et al. 2020

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In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.

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“…However, DBARC can be influenced by components and process conditions [32]. Toukhy and co-workers [33] demonstrate a first generation of methacrylate based DBARCs with promising results.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

et al. 2020

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“…In our first generation approach, the polymer used in this DBARC is insoluble in conventional resist spin-casting solvents. This material is based on a co-polymer of benzyl methacrylate (BMA) and mevalonic lactone methacrylate (MLMA) [5]. This polymer's design was optimized to produce insoluble coatings in Propylene glycol methyl ether acetate (PGMEA) solvent, but also to ensure that it could be dissolved in 4-hydroxy-4-methyl-2-pentanone.…”

Section: Introductionmentioning

confidence: 99%

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

Houlihan

Dioses

Zhang

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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We will discuss our recent results using a second generation radiation sensitive developable 193 Bottom Antireflective coatings (DBARC,s). These DBARC materials are made solvent resistant the application of a resist coating on top of them through a crosslinking mechanism that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. Typically this is done by crosslinking a copolymer containing a hydroxyl moiety with a polyfunctional vinylether during post applied bake. This DBARC approach, after exposure, allows for development of the stack in exposed areas down to the substrate eschewing the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked. We will give an update on the performance our latest 193 nm DBARC materials used with different Implant 193 nm resists when using a phase shift mask with off axis illumination.

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“…Photosensitive DBARCs have photoimageable properties and resolve patterns irrespective of upper resist layer [9][10][11][12][13][14][15][16][17][18]. Therefore, they have better resolution and through-pitch performance which are required for logic devices and critical layers.…”

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confidence: 99%

PAG and Quencher Effects on DBARC Performance

Padmanaban

Kudo

Chakrapani

et al. 2011

J. Photopol. Sci. Technol.

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Radiation sensitive developable bottom anti-reflective coatings (DBARC) for 193nm lithography: first generation

Cited by 6 publications

References 0 publications

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

PAG and Quencher Effects on DBARC Performance

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