Radiation-induced segregation in binary and ternary alloys

Okamoto, P.R.; Rehn, L. E.

doi:10.1016/0022-3115(79)90587-7

Cited by 368 publications

(116 citation statements)

References 38 publications

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“…interfaces between adjacent components in a composite-are sinks for radiation-induced point defects [6][7][8][9] and may reduce swelling and hardening. In alloys, however, they are the cause of radiation-induced solute segregation (RIS) [10,11], which in turn enhances corrosion and embrittlement. There may, therefore, be a tradeoff between decreasing radiationinduced defect concentrations by increasing their flux to interfaces and decreasing defect fluxes to inhibit RIS.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

et al. 2011

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“…Transmission electron microscopic (TEM) in-situ observation coupled with computer calculation is one of most powerful methods for clarifying the mechanism of irradiation-induced solute redistribution near grain boundaries. [5][6][7] Results of several experimental studies showing desirable effect of oversized solute additives on RIS in austenitic stainless steels have been reported, [8][9][10] but there are few reports on the effect of undersized solute additives. In this study, therefore, undersized solutes, silicon and phosphorus, were added to the high-purity Fe-15Cr-20Ni based alloy and the influence of them on RIS at grain boundaries was investigated.…”

Section: Introductionmentioning

confidence: 99%

Influence of Silicon and Phosphorus on Radiation-Induced Segregation of Chromium and Nickel in Austenitic Model Alloys

2005

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The influence of undersized solute additions on radiation-induced segregation (RIS) at grain boundaries was examined for austenitic model alloys. High-purity Fe-15Cr-20Ni alloys, doped with either 0.5 mass% silicon or 0.025 mass% phosphorus, were exposed to electron irradiation at several temperatures in a high-voltage electron microscope. The grain boundary depletion of chromium and segregation of nickel were significantly suppressed by the addition of silicon and phosphorus, and the addition of phosphorus significantly reduced the RIS at a grain boundary. It was shown by numerical simulation that the present results stem from the strong interaction between the additives and interstitial atoms produced by the electron irradiation.

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“…First, M increases with temperature up to a critical value of approximately 650 K. Then, it gradually decreases until, at T = 900 K, the degree of segregation is practically zero. The causes behind this behavior are well understood [54]. Essentially, at low temperatures, vacancy mobility is limited, leading to high excess vacancy concentration and high recombination rates.…”

Section: Abvi System: Radiation-induced Segregation At Surfacesmentioning

confidence: 99%

A generalized Ising model for studying alloy evolution under irradiation and its use in kinetic Monte Carlo simulations

Huang

Marian

2016

J. Phys.: Condens. Matter

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We derive an Ising Hamiltonian for kinetic simulations involving interstitial and vacancy defects in binary alloys. Our model, which we term 'ABVI', incorporates solute transport by both interstitial defects and vacancies into a mathematically-consistent framework, and thus represents a generalization to the widely-used ABV model for alloy evolution simulations. The Hamiltonian captures the three possible interstitial configurations in a binary alloy: A-A, A-B, and B-B, which makes it particularly useful for irradiation damage simulations. All the constants of the Hamiltonian are expressed in terms of bond energies that can be computed using first-principles calculations. We implement our ABVI model in kinetic Monte Carlo simulations and perform a verification exercise by comparing our results to published irradiation damage simulations in simple binary systems with Frenkel pair defect production and several microstructural scenarios, with matching agreement found.

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Radiation-induced segregation in binary and ternary alloys

Cited by 368 publications

References 38 publications

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Influence of Silicon and Phosphorus on Radiation-Induced Segregation of Chromium and Nickel in Austenitic Model Alloys

A generalized Ising model for studying alloy evolution under irradiation and its use in kinetic Monte Carlo simulations

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