Radiation induced luminescence processes in c-BN

Trinkler, L.; Bērziņa, B.; Benabdesselam, Mourad; Iacconi, P.; Bøtter‐Jensen, L.; Atobe, K.

doi:10.1016/j.radmeas.2004.01.010

Cited by 5 publications

(5 citation statements)

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“…along with high thermal, chemical and radiation stability make hexagonal boron nitride a prospective material for multifunctional optoelectronic applications (Ci et al, 2010;Kubota et al, 2007;Watanabe et al, 2004;Solozhenko et al, 2001). It is known that the induced luminescence response in the irradiated materials based on c-BN and h-BN under thermal and optical stimulation is observed within the visible and UV range photon energies (Museur et al, 2008;Trinkler et al, 2004;Galanov et al, 1989;Katzir et al, 1975). These potential dosimetric signals are caused by processes with participating of different lattice defects of intrinsic and extrinsic genesis.…”

Section: Introductionmentioning

confidence: 99%

“…These potential dosimetric signals are caused by processes with participating of different lattice defects of intrinsic and extrinsic genesis. At present it is established that many features in the behavior of hexagonal and cubic boron nitrides exposed to radiation are dictated by the complexes based on nitrogen vacancies with substitutional oxygen atoms and carbonic impurities (Kubota et al, 2007;Museur et al, 2007;Trinkler et al, 2004). In addition, defects of synthesis or radiation origin have similar spectral parameters and are to be taken into account while analyzing induced luminescence processes.…”

Section: Introductionmentioning

confidence: 99%

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Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Weinstein¹,

Вохминцев²,

Minin³

et al. 2013

Radiation Measurements

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h i g h l i g h t s< UV-irradiated h-BN powder is characterized by three TL peaks in different spectral regions. < TL peaks at 380 and 600 K are caused by capture levels of one-boron and three-boron centers, respectively. < Visible range emissions of vacancy centers and oxygeneboron complexes dominate in thermoluminescence of h-BN. a r t i c l e i n f o b s t r a c tThermally stimulated luminescence (TL) from UV-irradiated h-BN powder synthesized using carbamide technique was studied. Three TL peaks at T max ¼ 380, 500 and 600 K during linear heating with 2 K/s rate in RT e 773 K temperature range were observed. It was found that the 2.90 and 3.25 eV emission bands, which were related with recombination centers on the basis of V N and BO À -complexes, dominate in TL spectra of h-BN. Experimental TL glow curves were analyzed in terms of general order kinetics and energy parameters of responsible capture levels were estimated. It was shown, considering the independent data on the luminescent properties of hexagonal boron nitride in different structural states, that TL peaks at 380 K and 600 K were due to traps based on the one-boron and the three-boron centers with thermal depth E A ¼ 0.7 and 1.0 eV, respectively. The possible origin of the trap with E A ¼ 1.6 eV, responsible for the TL peak at 500 K, is discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Weinstein¹,

Вохминцев²,

Minin³

et al. 2013

Radiation Measurements

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“…No optically active impurity defects have been introduced into cBN by ion implantation. Known radiation defects are RC1-RC4, C, and BN1, formed in cBN due to bombardment with electrons and ion implantation [3,4,7,13].…”

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confidence: 99%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

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Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385-400 nm and 365-395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300-350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.Key words: cubic boron nitride, photoluminescence, cathodoluminescence, nature of optically active defects, luminescence center, spectrum with complex structure, resonance vibrations, configuration diagram.Introduction. Cubic boron nitride (cBN), as a wide-gap semiconductor, is a promising material for use in electronics and optoelectronics, detectors and devices suitable for operation under high radiation and temperature conditions and also in chemically aggressive media. Since the defect and impurity structure of cBN has not been well studied, it should be quite effective to analyze it by luminescence correlated with the macroscopic characteristics of the material, taking into account the indicated practical applications.From the standpoint of basic research on cBN, of course, direct analysis of the nature of the optical transitions at the luminescence centers in cBN is of interest, including comparison with its closest Group III-Group V analogs: diamond and gallium nitride.Thus in the luminescence spectra of gallium nitride, we observe a sufficient number of features of a type associated with donor-acceptor recombination or with recombination on free or bound excitons [1]. Of course, in the indicated cases, oppositely charged impurities or defects are present simultaneously in GaN which are introduced into the material by doping or are present in the material as intrinsic defects. Effective doping of diamond is difficult, and obtaining diamond with n-type conductivity is problematic. This is explained by the lack of luminescence centers of the above-indicated type in diamond [2] and formation of many defects in diamond such that electronic transitions in them are intracenter transitions.The number of luminescence centers in cBN that have been detected so far is small compared with diamond and GaN, and only isolated centers have been thoroughly studied. Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands...

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“…One intense absorption band is centered at 221 nm (5.61 eV), which was different from that of single crystal c-BN (6.1–6.4 eV) and h-BN (5.7–6.0 eV). − Besides, PL emission spectroscopy was also employed to characterize the E-BN samples by excitation with a laser line at 254 nm. The PL spectrum (Figure b) was dominated by a band centered at 383 nm (3.24 eV), and two other less intensive bands appear at 323 nm (3.84 eV) and 401 nm (3.09 eV), which was different from that of c-BN (2.4–2.6 eV) and h-BN (3.4–3.8 eV). − Actually, these optical results may be influenced by the morphology, structure, residual impurities, and intrinsic defect of E-BN samples, such as band-to-band optical transition and B or N vacancies . These optical properties of octahedron E-BN crystals will be the prerequisite of the potential applications in the fields of ultraviolet optoelectronics devices and ultraviolet lasers. , …”

Section: Resultsmentioning

confidence: 99%

Growth and Optical Properties of Explosion Phase Boron Nitride Octahedron Crystals

Wang

et al. 2013

Crystal Growth & Design

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A low temperature and high pressure synthetic route assisted with ball milling has been established to prepare high quality orientated explosion phase boron nitride (E-BN) octahedron crystals using H 3 BO 3 , iron powders, NH 4 Cl, and Mg as starting materials. FSEM, TEM, HRTEM, SAED, XRD, Raman, FTIR, and XPS were employed for characterization of the morphology and structure of as-synthesized E-BN samples. The E-BN was identified as the face-centered cubic structure with a lattice parameter of 8.245 Å. The typical particle sizes were mainly in the range of 30−120 nm. A UV spectrum indicated that the product has an obvious absorption band (5.61 eV). Photoluminescence spectra revealed that it has a dominant ultraviolet emission peak at 383 nm. The possible chemical reactions as well as the proposed mechanism of the growth of E-BN octahedron crystals were also discussed.

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Radiation induced luminescence processes in c-BN

Cited by 5 publications

References 5 publications

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Luminescence centers in cubic boron nitride

Growth and Optical Properties of Explosion Phase Boron Nitride Octahedron Crystals

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