Radiation Induced Loss In Undoped And F-Doped Silica

Abstract

The radiation resistance of undoped and F -doped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F -doped silica shows improved radiation resistance compared to that of the undoped water -free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work.