Radiation induced leakage current in N-channel SOS transistors

Kjar, R. A.; Peel, J. L.

doi:10.1109/tns.1974.6498929

Cited by 31 publications

(1 citation statement)

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“…Kjar and Peel,199 Neamen et al, 200 and Schlesier 201 showed that positive charge can be trapped near the silicon-sapphire interface in a manner similar to that which causes positive charges to be trapped near the silicon-dioxide interface. Kjar and Peel,199 Neamen et al, 200 and Schlesier 201 showed that positive charge can be trapped near the silicon-sapphire interface in a manner similar to that which causes positive charges to be trapped near the silicon-dioxide interface.…”

Section: Radiation Studiesmentioning

confidence: 99%

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Ipri

1981

Silicon Integrated Circuits

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Section: Radiation Studiesmentioning

confidence: 99%

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Ipri

1981

Silicon Integrated Circuits

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Radiation Effects

Schwank¹,

Sexton²,

Dodd³

et al. 2005

Encyclopedia of RF and Microwave Engineering

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The effects of the space radiation environment on semiconductor device response are reviewed. Semiconductor devices in space can be exposed to energetic particles that can cause device degradation and system failure. The space environment consists primarily of protons, electrons, and heavy ions. Ionizing radiation (electrons and protons) can induce significant charge buildup in oxides, causing large threshold voltage shifts, and decreases in carrier mobility and bipolar transistor gain. This can result in large increases in the static power current of an IC, degradation in timing, and potential loss of functionality. In the space environment, heavy ions and protons can cause single‐event effects. There are two general classes of single‐event effects: soft errors and hard errors. Soft errors cause no permanent damage and may be correctable. Single‐event upsets are one type of soft error. If the error rate caused by soft errors is too high, performance degradation and even system failure can result. Hard errors cause permanent damage to devices. As integrated circuit technologies advance, they are becoming more prone to soft errors caused by energetic ions. In fact, soft errors caused by energetic particles present in the terrestrial environment and emitted from metal impurities are rapidly making single‐event upset a major reliability concern for ground‐based commercial ICs.

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Radiation Damage

Agajanian¹

1976

Semiconducting Devices

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Radiation induced leakage current in N-channel SOS transistors

Cited by 31 publications

References 0 publications

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Radiation Effects

Radiation Damage

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