Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

Morgado, E.; Schwarz, R.; Braz, T.; Casteleiro, C.; Maçarico, A.; Vieira, M.; Alves, E.

doi:10.1016/j.jnoncrysol.2005.11.093

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…7. Unfortunately, the microscopic nature of excessively accumulated dangling bonds is not clear despite that studies on photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR) have been performed in order to investigate the detail of radiation defects in a-Si:H [6], [32]. The monotonic increase in dangling bonds and no unique spectrum originating from the radiation defects have been found at present.…”

Section: A Electronic Transport Transition From Band Conduction To Ho...mentioning

confidence: 99%

“…Each hydrogen concentration can be derived from the deconvolution of the stretching modes using the Gaussian function [40]. Assuming that the hydrogen concentration of a mode is proportional to the integrated absorption , the total hydrogen concentration can be calculated as follows: (6) where and represent the wavenumber cm and the absorption coefficient cm , respectively. is the proportionality factor cm .…”

Section: Hydrogen Bonding State Change Due To Self-ion Irradiationmentioning

confidence: 99%

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Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions

Sato

Ohshima

2013

IEEE Trans. Nucl. Sci.

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Electric conductivity variations of hydrogenated amorphous silicon due to self-ion irradiation, i.e. irradiation with Si or H ions, are comprehensively investigated. The anomalous enhancement of dark conductivity (DC) and photoconductivity (PC) are firstly observed due to proton irradiation in the cases of undoped and n-type a-Si:Hs, and after that both decrease with increasing the irradiation fluence. However, Si ion irradiation does not induce the anomalous enhancement and induce a monotonic decrease in DC and PC in the low fluence regime. It is shown from the Seebeck effect analysis that the anomalous enhancement is caused by generation of donor-centers which have metastable nature at room temperature. The decrease in DC and PC is ascribed to the carrier removal effect and the carrier lifetime decrease accompanied by accumulation of dangling bonds, respectively. However, further irradiation causes the loss of photoconduction and the drastic increase in DC. This indicates that the dominant conduction mechanism changes from the band transport to the hopping transport due to excessive accumulation of dangling bonds. The change in the dominant conduction mechanism occurs at above about dpa (displacement per atom) and is independent of the majority carrier concentration before irradiation. It is concluded that the conductivity variations caused by self-ion irradiation can be systematically categorized according to the ratio of the nuclear energy deposition to the electronic energy deposition of incident ions.

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Section: A Electronic Transport Transition From Band Conduction To Ho...mentioning

confidence: 99%

Section: Hydrogen Bonding State Change Due To Self-ion Irradiationmentioning

confidence: 99%

Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions

Sato

Ohshima

2013

IEEE Trans. Nucl. Sci.

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Stability of GaN films under intense MeV He ion irradiation

Schwarz¹,

Cabeça²,

Morgado³

et al. 2007

Diamond and Related Materials

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Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation

Sato

Ohshima

2014

Journal of Non-Crystalline Solids

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Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

Cited by 5 publications

References 11 publications

Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions

Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions

Stability of GaN films under intense MeV He ion irradiation

Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation

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