Radiation-induced defect centers in 4H silicon carbide

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

“…The observed E2 state resembles a defect already reported in the literature, the so-called Z 1/2 [32,33]. It should be noted that in the case of the fluence 1 Â 10 10 cm À2 the estimated value for the activation energy is a little bit higher than the reported values, but this is due to the fact that the E1 and E2 traps are closely spaced, and the low temperature E1 peak (so called ''shoulder'') overlaps with the E2 peak, which leads to the certain errors in energy estimation.…”

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

“…When the samples were annealed above 1400 °C, the surface was protected with a carbon cap to avoid Si evaporation [30]. After the annealing, the carbon cap was removed by oxidation at 1000 °C for 1 h. DLTS measurements were performed in the temperature range from 150 K to 700 K. As reported [28,[31][32][33], both Z 1/2 and EH 6/7 centers are thermally very stable, and the concentrations start to decrease at annealing temperature higher than 1500-1600 °C. On the other hand, hole traps (HK2, HK3, and HK4) are almost annealed out at 1550 °C.…”

Vacancy Defects Detected by Positron Annihilation

“…• C [56,58,59,67,73]. The E 1/2 in 6H-SiC and the Z 1/2 in 4H-SiC are reported to exhibit the negative-U character [74]- [76].…”