Radiation hardness of graded-gap AlxGa1−xAs X-ray detectors

Šilėnas, A.; Dapkus, L.; Požela, K.; Požela, J.; Jucienė, V.; Jasutis, V.

doi:10.1016/j.nima.2005.03.049

Cited by 9 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The temperature dependence is reported over the range of 261 K-342 K and is found to be best represented by the equation e AlGaAs ¼ 7.327-0.0077 T, where e AlGaAs is the average electron-hole pair creation energy in eV and T is the temperature in K. The compound semiconductor Al 0.8 Ga 0.2 As has received attention as a detector material for use in soft X-ray spectroscopy instruments which need to operate at high temperature ()20 C). [1][2][3][4][5][6][7][8][9][10][11][12][13] At high temperatures, the wide bandgap of Al 0.8 Ga 0.2 As (2.09 eV (Ref. 14)) leads to a thermally generated leakage current lower than that which would be present in a silicon detector of the same design.…”

mentioning

confidence: 99%

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Barnett

Lees

Bassford

2013

Applied Physics Letters

View full text Add to dashboard Cite

The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al0.8Ga0.2As is reported following X-ray measurements made using an Al0.8Ga0.2As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342 K and is found to be best represented by the equation εAlGaAs = 7.327–0.0077 T, where εAlGaAs is the average electron-hole pair creation energy in eV and T is the temperature in K.

show abstract

mentioning

confidence: 99%

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Barnett

Lees

Bassford

2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The reports in the literature regarding Al x Ga 1−x As photon counting X-ray detectors are very few. Ripamoni et al [1] and Lauter et al [2,3] reported graded x Al x Ga 1−x As/GaAs separate absorption and multiplication (SAM) staircase photodiodes, and Silenas et al [4][5][6][7][8] and Dapkus et al [9] have reported non-photon counting Al x Ga 1−x As/GaAs X-ray detectors. Lees et al [10] was the first to report Al 0.8 Ga 0.2 As p + -p − -n + (or p + -i-n + ) photon counting spectroscopic X-ray photodiodes in the literature.…”

Section: Jinst 6 C12007mentioning

confidence: 99%

Development of high temperature AlGaAs soft X-ray photon counting detectors

et al. 2011

View full text Add to dashboard Cite

New types of detectors based on the wide band gap material AlGaAs have been developed for soft X-ray spectroscopy applications. We report on the spectroscopic performance of simple p-i-n diodes and avalanche photodiodes (APDs). A number of diode types with different layer thicknesses have also been characterised. X-ray spectra from 55 Fe and 109 Cd radioactive sources show these diodes can be used for spectroscopy with promising energy resolution (1.0-1.25 keV) over a -30 to +90 • C temperature range. The temperature dependence of the avalanche multiplication process at soft X-ray energies in Al 0.8 Ga 0.2 As APDs was also investigated at temperatures from -20 to +80 • C. The temperature dependence of the pure electron initiated multiplication factor (M e ) and the mixed carrier initiated avalanche multiplication factor (M mix ) were extracted from the X-ray spectra. The experimental results are compared with a spectroscopic Monte Carlo model for Al 0.8 Ga 0.2 As diodes from which the temperature dependence of the pure hole initiated multiplication factor (M h ) is determined.Monte Carlo simulations for the avalanche gain of absorbed X-ray photons have also been developed to study the relationship between avalanche gain and energy resolution for semiconductor X-ray avalanche photodiodes. The model showed that the distribution of gains, which directly affects the energy resolution, depends on the number of injected electron-hole pairs (and hence the photon energy), the relationship between the two ionization coefficients, and the overall mean

show abstract

“…As a result, the detector response decreases. It was obtained [42] that the current response of the graded-gap Al x Ga 1−x As detector decreases by a factor of 7 at the alpha particle irradiation dose of 10 10 cm −2 . The optical response, however, decreases by only 1.5 times at the same irradiation dose.…”

Section: Interaction Of X-ray Radiation With Al X Ga 1−x As Structuresmentioning

confidence: 99%

Microwave radiation and X-ray-induced phenomena in semiconductors

Ašmontas¹,

Laurinavičius²,

Paukštė³

et al. 2005

Lith. J. Phys.

View full text Add to dashboard Cite

We review experimental results on interaction of microwave and X-rays with various semiconductors that have been obtained at the Semiconductor Physics Institute starting from the pioneering works of J. Požela up to his latest achievements. Special attention is paid to the microwave technique allowing one to estimate the hot electron diffusion coefficient in semiconductors and the bigradient effect, the phenomenon which has been recognized as a discovery in 1977. The application aspects of the above research are furthered in two different approaches: in microwave range, this is done via non-destructive characterization of material homogeneity either by excitation of the helicon waves or by a local excitation of millimetre waves in the tested sample, while in X-ray range this is exposed in the application of inhomogeneous and graded-gap semiconductors to convert the X-rays into optical range thus enabling their detection by conventional CCD cameras.

show abstract

Radiation hardness of graded-gap AlxGa1−xAs X-ray detectors

Cited by 9 publications

References 7 publications

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Development of high temperature AlGaAs soft X-ray photon counting detectors

Microwave radiation and X-ray-induced phenomena in semiconductors

Contact Info

Product

Resources

About