Radiation hardness of Ge{2}Sb{2}Te{5} thin films to 80 MeV Si ion irradiation

Kanda, Neetu; Thakur, Anup; Singh, Fouran; Singh, Abhinav Pratap

doi:10.1080/10420150.2021.1975707

Cited by 2 publications

(5 citation statements)

References 33 publications

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“…Hence, it will be possible to tune the bandgap and the crystallization kinetics using Ag-ion irradiation. 55 The study involving 80 MeV Si-ions 35 showed not much effect on the structural properties of pure and Ag-doped GST. A comparison of these results showed that the two energy losses, S e and S n , play an important role in determining the effects of SHI on the properties of pure and Ag-doped GST.…”

Section: High-energy Irradiationmentioning

confidence: 93%

“…In the MeV range, the effect of swift heavy ions (SHI) on the structural, optical and electrical properties of GST has been studied by Kanda et al 35,55,160 They studied the effect of 120 MeV Ag 9+ and 80 MeV Si 6+ ions on the structural, optical and electronic properties of pure and Ag-doped GST. They observed crystallization in pure GST films with Ag-ion irradiation.…”

Section: High-energy Irradiationmentioning

confidence: 99%

“…Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 , and Ge 2 Sb 2 Te 5 are a few examples of these ternary compositions. 34,35 All these exhibit stable and fast switching between the two phases. [36][37][38] Notably, the composition GST is extensively studied due to its superior properties, viz.…”

Section: Introductionmentioning

confidence: 99%

“…This binary tie line is named pseudo because different ternary compositions exist on moving from one binary composition to another along the tie line. Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 , and Ge 2 Sb 2 Te 5 are a few examples of these ternary compositions 34,35 . All these exhibit stable and fast switching between the two phases [36][37][38] .…”

mentioning

confidence: 99%

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Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

et al. 2023

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Section: High-energy Irradiationmentioning

confidence: 93%

Section: High-energy Irradiationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

et al. 2023

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“…Бүгінгі күні ең жақсы қорғаныс ғарыштық жағдайлар үшін радиацияға төзімді электрониканы пайдалану болып табылады. Фазаны өзгертуге негізделген оперативты жады (PCRAM -Phase Change Random Access Memory) технологиясы деканометрлік диапазонға дейін масштабтау мүмкіндігі бар [1] және жоғары радиацияға төзімділігі жаңа буын перспективалылардың бірі болып табылады [2][3][4][5][6]. Бұл материалдардың сәулеленуге төзімділігі олардың құрылымындағы U − орталықтары [7] деп аталатын меншікті ақаулардың жоғары концентрациясына тікелей байланысты.…”

Section: кіріспеunclassified

Pecularities of the switching and memory effect in bismuth-doped radiation-resistant GE2SB2TE5 nanoscale films

Almas,

Zhakiev,

Dyussembayev

et al. 2022

EJSU

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The physics and technology of noncrystalline materials is one of the rapidly developing areas of condensed matter physics, materials science, and nanotechnologies. Among the variety of materials with a non-crystalline structure, a special place is occupied by the class of chalcogenide glassy semiconductors (CGS) with unique properties and phenomena, such as the switching effect, photostructural transformations. The switching effect is observed in thin CGS films and is associated with a fast-reversible phase transition of the structure from the glassy state to the crystalline state under the action of voltage pulses or laser radiation. Based on this effect, a separate class of information carriers has been formed for non-volatile storage devices such as PCM (Phase Change Memory) with high performance and reliability. Materials for use in PCM devices are CGSs of complex compositions lying on the GeTe-Sb2Te3 quasi-binary boundary, and thin films of Ge2Sb2Te5 composition are the most promising for use in PCM devices. The ability to control the electronic properties of such functional materials based on CGS significantly expands the scope of their application and is an important scientific and practical task, since traditional methods for purposefully changing the electronic properties of crystalline semiconductors, such as doping during synthesis or the thermal diffusion method, turned out to be ineffective for CGS. Impurities introduced into CGS at low concentrations by the methods indicated above usually do not show electrical activity, since they are compensated by their charged structural defects, and an increase in the impurity concentration leads to significant crystallization. In this work, the atomic composition of Ge2Sb2Te5 nanosized films with a bismuth content of more than 12 at.%, obtained by ion-plasma deposition in the direct current mode, was studied by the method of energy dispersive analysis using a scanning electron microscope. In addition, the current–voltage characteristics of the samples were measured. It has been found that the transition voltage and the time, which characterize the switching and memory effects, depend significantly on the film thickness and composition. The addition of bismuth reduces the film switching time. A decrease in the film thickness leads to a decrease in the threshold voltage Uth and the switching time. We believe that the results of this work are useful for the development of optical memory based on phase change materials.

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Radiation hardness of Ge_{2}Sb_{2}Te_{5} thin films to 80 MeV Si ion irradiation

Cited by 2 publications

References 33 publications

Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

Pecularities of the switching and memory effect in bismuth-doped radiation-resistant GE2SB2TE5 nanoscale films

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Radiation hardness of Ge{2}Sb{2}Te{5} thin films to 80 MeV Si ion irradiation

Cited by 2 publications

References 33 publications

Recent advances in doped Ge2Sb2Te5 thin film based phase change memories

Recent advances in doped Ge2Sb2Te5 thin film based phase change memories

Pecularities of the switching and memory effect in bismuth-doped radiation-resistant GE2SB2TE5 nanoscale films

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Radiation hardness of Ge_{2}Sb_{2}Te_{5} thin films to 80 MeV Si ion irradiation

Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories