Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

Kruchonak, U.; El-Azm, S. Abou; Afanaciev, K.; Chelkov, G.; Demichev, M.; Gostkin, M. I.; Guskov, A.; Firu, Elena; Kobets, V. V.; Leyva, Antonio; Nozdrin, A.; Porokhovoy, S.; Sheremetyeva, A. I.; Smolyanskiy, P.; Torres, A. G.; Tyazhev, A.; Толбанов, О. П.; Zamyatin, N. I.; Zarubin, A.; Zhemchugov, A.

doi:10.1016/j.nima.2020.164204

Cited by 7 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the charge collection efficiency will be degraded due to trapping. These effects were observed in our previous experiments [11] and are in accordance with radiation studies of other research teams dealing with GaAs detectors [12][13][14][15].…”

Section: Introductionsupporting

confidence: 91%

See 1 more Smart Citation

Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy

Šagátová¹,

Kršjak²,

Sojak³

et al. 2021

J. Inst.

View full text Add to dashboard Cite

Radiation degradation of semi-insulating GaAs detectors by 8 MeV electrons up to doses of 1500 kGy is studied in this paper. The influence of irradiation on GaAs material parameters and on spectrometric and electrical properties of fabricated detectors is evaluated. The detector material was degraded before contact preparation, which ensured separation of radiation degradation solely to the bulk material, excluding the contact degradation. The positron annihilation lifetime spectroscopy (PALS) was involved to characterize the substrate material together with galvanometric measurements. Radiation-induced mono-vacancies were clearly identified by PALS in the irradiated materials with increasing concentration up to 2.8 × 1016 cm−3 at maximal applied dose. In correlation with defect concentration the electron Hall mobility decreased with dose down to 3270 cm2 V−1 s−1 and resistivity increased up to 5.22 × 108 Ω cm at 1500 kGy. The bulk material properties influenced the parameters of fabricated detectors. The detectors lost their current blocking behaviour at 1000 kGy according to current-voltage measurements. The charge collection efficiency during alpha-particle and gamma ray measurements almost exponentially decreased with applied dose from initial 40% down to 5% at 1500 kGy in the case of alpha spectrometry and from 48% to 12% at 500 kGy for gamma spectrometry.

show abstract

Section: Introductionsupporting

confidence: 91%

“…It is obvious that the trend of CCE deterioration with applied dose is equal, differing in initial value influenced by original material quality. Moreover, this exponential-like decrease of CCE is in correlation to the observations of other teams studying the GaAs detectors degraded by electrons [12][13][14][15].…”

Section: Spectrometric Propertiessupporting

confidence: 86%

Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy

Šagátová¹,

Kršjak²,

Sojak³

et al. 2021

J. Inst.

View full text Add to dashboard Cite

show abstract

“…Previous studies have shown the ability of GaAs detectors to withstand doses of a few MGy when degraded by MeV electrons with the main limiting factor which is the charge collection efficiency decreasing with overall dose [13][14][15][16][17][18]. On the other hand, we have observed an improvement of the detection efficiency after initial detector degradation by 5 MeV electrons up to doses of 200 kGy [13] when measuring both the gamma as well as the alpha particle spectra of 241 Am.…”

Section: Introductionmentioning

confidence: 62%

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Sagatova,

Kurucova,

Necas

et al. 2024

J. Inst.

View full text Add to dashboard Cite

The radiation hardness of GaAs detectors against high-energy electrons goes up to a few MGy. Their degradation is mainly connected to the decrease of the charge collection efficiency and the increase of the reverse current. On the other hand, an improvement in detection efficiency was observed at low degradation doses. The explanation that this could be caused by an enlargement of the detector active area due to spreading of the collecting electric field caused by radiation-induced defects is studied in this paper. We have used the alpha particles of 241Am, which interact in the GaAs surface layer, to study the enlargement of the detector active region after its degradation by 5 MeV electrons with doses ranging from 24 to 2000 kGy. The results show that the electric field spreads behind the Schottky contact metallization edges not only with increasing applied reverse bias but also with rising cumulative dose of radiation degradation in the dose range from 24 up to 100 kGy, followed by a slight reduction in area size. The electric collecting field keeps larger dimensions than before detector degradation for doses up to 600 kGy. For higher doses than 1000 kGy, the active area of the detector was reduced below its initial size before degradation. Moreover, the improvement of detection efficiency with increasing bias applied becomes weaker with increasing degradation dose. Radiation degradation affects the electric field distribution in semi-insulating GaAs detectors and the results obtained may provide useful knowledge to preparation of multi-pixel GaAs structures for imaging and particle tracking.

show abstract

“…Its wide bandgap of 1.42 eV enables detector operation at RT. In comparison to silicon, the GaAs exhibits much better radiation hardness [10][11][12][13][14][15][16] and has higher detection efficiency for photons thanks to its higher electron density. However, in comparison to silicon detectors, its spectrometry quality is a limiting factor.…”

Section: Introductionmentioning

confidence: 99%

Influence of base material thickness on spectrometry of semiconductor detectors based on semi-insulating GaAs

Šagátová,

Kurucová,

Kotorová

et al. 2023

EPJ Web Conf.

View full text Add to dashboard Cite

The bulk semi-insulating GaAs material was used for preparation of pad radiation detectors with circular contacts of 1 mm diameter. The spectrometric properties of a semiconductor detector depend on the quality of the base material and on the deposited metallization. Another factor affecting the detector spectrometry is the applied bias controlling the electric collection field. With increasing bias, the charge collection efficiency of particular detector grows. However, this spectrometric property should be changing with detector thickness, which affects the intensity of electric collection field at constant bias applied through the detector sandwich structure. In this paper we have studied the electrical and spectrometric properties of semi-insulating GaAs detectors as a function of their thickness. The measured saturation reverse current was in the range of 3 – 30 nA, increasing with decreasing detector thickness at a substrate resistivity of about of 107 Ωcm. The maximal obtainable charge collection efficiency evaluated from 241Am gamma spectra grew with decreasing detector thickness from 50% for a 450 µm thick detector to 80% for a 230 µm thick detector.

show abstract

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

Cited by 7 publications

References 15 publications

Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy

Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Influence of base material thickness on spectrometry of semiconductor detectors based on semi-insulating GaAs

Contact Info

Product

Resources

About