Radiation hardness of FDSOI and FinFET technologies

Alles, Michael L.; Schrimpf, Ronald D.; Reed, Robert A.; Massengill, L.W.; Weller, Robert A.; Mendenhall, Marcus H.; Ball, D. R.; Warren, K.M.; Loveless, T. D.; Kauppila, J. S.; Sierawski, Brian D.

doi:10.1109/soi.2011.6081714

Cited by 32 publications

(16 citation statements)

References 1 publication

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“…FDSOI is often introduced as a technological answer to radiation effects and also to laser-based fault attacks [8,28] due to the thin box that isolates the CMOS transistors from their wells. To date, an experimental validation of these expectations is still pending.…”

Section: Discussionmentioning

confidence: 99%

Laser-Induced Fault Effects in Security-Dedicated Circuits

Beroulle

Candelier

Castro

et al. 2015

VLSI-SoC: Internet of Things Foundations

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Abstract. Lasers have become one of the most efficient means to attack secure integrated systems. Actual faults or errors induced in the system depend on many parameters, including the circuit technology and the laser characteristics. Understanding the physical effects is mandatory to correctly evaluate during the design flow the potential consequences of a laser-based attack and implement efficient counter-measures. This paper presents results obtained within the LIESSE project, aiming at defining a comprehensive approach for designers. Outcomes include the definition of fault/error models at several levels of abstraction, specific CAD tools using these models and new counter-measures well-suited to thwart laser-based attacks. Actual measures on components manufactured in the new 28 nm FDSOI technology are also presented.

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Section: Discussionmentioning

confidence: 99%

Laser-Induced Fault Effects in Security-Dedicated Circuits

Beroulle

Candelier

Castro

et al. 2015

VLSI-SoC: Internet of Things Foundations

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“…Table III summarizes a set of predictions on 22nm SRAM soft error rates (SERs), comparing bulk silicon and ultra-thin FDSOI (UT-FDSOl) processes [6]. FDSOT process [7].…”

Section: Advantages In See Tolerancementioning

confidence: 99%

The avenue of FDSOI radiation hardening

Zhao

Liu

2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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Advanced FDSOI technology has inherent resistance to transient ionizing radiation effects and better Single Event Effect (SEE) tolerance. Tn the meantime, total dose hardening is now the biggest challenging for the cutting edge FDSOT technology. Three TID hardening techniques are discussed in this paper. The effects of buried oxide modification, device structure innovation and biased Double SOl methods are shown and compared in detail.This discussion describes the most promising avenue to radiation hardened FDSOI devices and circuits.

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“…In the terrestrial environment errors are induced by high-energy neutrons from the cosmic radiation background [1] as well as alpha particles that are emitted by packaging materials [2]. Recently errors due to muon (μ) particles present in the cosmic radiation have become of interest [3]- [6] for the most advanced technology nodes. The vast majority of cosmic ray muons have relatively low linear energy transfer (LET) in Si, implying low charge collection by susceptible devices.…”

Section: Introductionmentioning

confidence: 99%

“…It is, therefore, increasingly likely that muons can cause errors. Indeed, simulations of muon induced upsets have indicated their potential as sources of soft-errors in the terrestrial environment [4], [6]. More recently, muon-induced soft errors have been shown to pose an increasing reliability issue as technology scales below 65 nm [4] based on accelerated test measurements using muon beams with limited energy ranges.…”

Section: Introductionmentioning

confidence: 99%

Muon-Induced Soft Errors in SRAM Circuits in the Terrestrial Environment

Fang

Oates

2015

IEEE Trans. Device Mater. Relib.

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Muon-induced soft errors are an increasing concern with technology scaling. However, the impact of terrestrial muons to the failure rate of circuits is unclear as methodologies have not yet been developed to extrapolate from accelerated measurements to the terrestrial environment. We introduce a new method to estimate muon-induced soft error rates (SERs) in SRAM devices by equating the muon energy spectrum with an alpha particle energy spectrum with an equivalent LET. Using this method, we estimate that, in the terrestrial environment, a muon-induced SER is smaller than that from packaging-related alpha particle and cosmic ray neutron components. FinFET SRAM devices will show a much reduced muon SER compared with planar transistors due to the minimization of charge collection associated with the fin geometry.Index Terms-Single event upsets (SEU), soft error rate (SER), muon particle.

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Radiation hardness of FDSOI and FinFET technologies

Cited by 32 publications

References 1 publication

Laser-Induced Fault Effects in Security-Dedicated Circuits

Laser-Induced Fault Effects in Security-Dedicated Circuits

The avenue of FDSOI radiation hardening

Muon-Induced Soft Errors in SRAM Circuits in the Terrestrial Environment

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