Radiation Hardness of a Silicon MESFET 4K x 1 sRAM

Houston, T.W.; Hite, L.R.; Darley, H. M.; Shedd, W.; Zugich, M. H.; LaPierre, D. C.

doi:10.1109/tns.1984.4333534

IEEE Trans. Nucl. Sci.

1984

DOI: 10.1109/tns.1984.4333534

|View full text |Cite

Radiation Hardness of a Silicon MESFET 4K x 1 sRAM

T.W. Houston

L.R. Hite

H. M. Darley

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1988

1991

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Radiation Hardness of a Silicon MESFET 4K x 1 sRAM

Cited by 6 publications

References 1 publication

BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

Influence of silicon-sapphire interface defects on SOS MESFET behavior

Overview of radiation hardening for semiconductor detectors

Contact Info

Product

Resources

About