Radiation hardness evaluation and phase shift enhancement through ionizing radiation in silicon Mach-Zehnder modulators

Zeiler, Marcel; Détraz, S.; Olanterä, Lauri; Nasr-storey, S. Seif El; Sigaud, Christophe; Soós, C.; Troska, J.; Vasey, F.

doi:10.1109/radecs.2016.8093130

Cited by 7 publications

(9 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of an increase in phase shift at low TID levels, before the phase shift starts to decrease, the values do not start from unity but are higher than the preirradiation values. As previously reported [14], shallow-etch devices can withstand a higher radiation dose before the phase shift starts to decrease compared with deep-etch devices, compatible with the hypothesis for radiation-induced interface charge build up being responsible for the observed changes in phase shift. The phase shift at −1 V of the deep-etch device is decreased to 50% of its preirradiation value at a TID of approximately 70 kGy, while the phase shift of the shallow-etch device begins to degrade above 500 kGy.…”

Section: Resultssupporting

confidence: 89%

“…With the knowledge gained in [14], further experiments were performed using the same customized silicon MZMs described there and in greater detail in [13]. The cross section of the modulator used is shown in Fig.…”

Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

“…The nominal doping concentration in the rib region is not known precisely, but it is expected to be in the region of 10 18 cm −3 . The higher doping concentration in the rib region was shown to make the modulator more radiation resistant at the expense of higher optical losses in the waveguides [14]. The contact (n++/p++) and the intermediate (n+/p+) doping concentrations were kept constant.…”

Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

“…The previous work has shown that SiPh MZMs are relatively insensitive to neutron radiation [10], [11], but they show strong degradation with the ionizing X-ray radiation [12]. Understanding of the radiation damage mechanisms in SiPh MZMs led to the design of custom MZMs [13] that have been shown to be significantly more radiation tolerant [14]. Fully optimized devices have been shown to be able to withstand a TID of up to 3.2 MGy (unbiased measurement), albeit with a larger initial device insertion loss.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

Optical links are vital components in the data transmission systems of high energy physics (HEP) experiments at CERN. With the ever higher beam fluxes achieved by the Large Hadron Collider, the optical components have to withstand higher radiation levels and handle ever-increasing data volumes. To face these challenges, the use of silicon photonics (SiPh) Mach-Zehnder modulators (MZMs) in the next generation of optical transceivers for HEP experiments is currently being investigated. In this paper, the dependence of the radiation hardness of custom-designed SiPh MZMs on temperature is reported, including the observed improvement in radiation tolerance at low operating temperatures that are closer to the typical temperatures found in HEP experiments. Furthermore, postirradiation annealing measurements of the devices were performed. An effective annealing method has been found by applying a forward current to the MZMs, leading to an almost immediate and full recovery of the device after irradiation up to 3 MGy. This enhanced device recovery method could effectively increase the radiation hardness tremendously in applications with low dose rates and periodic shutdown times.

show abstract

Section: Resultssupporting

confidence: 89%

Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Previous work has shown that silicon photonics Mach-Zehnder modulators (MZMs) are relatively insensitive to neutron radiation, but show strong degradation with ionizing X-ray radiation. It was further presented, that with customized MZM designs, increasing the rib height of MZMs (shallow-etch device), the resistance against X-ray radiation can be improved [2,3,4,5,6]. Recently, the influence of forward biasing on the radiation hardness was reported and a strong post-irradiation annealing effect was demonstrated [7].…”

Section: Introductionmentioning

confidence: 99%

Radiation tolerance enhancement of silicon photonics for HEP applications

Kraxner¹,

Détraz²,

Olanterä³

et al. 2019

Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)

Self Cite

View full text Add to dashboard Cite

Silicon photonics modulators and photodiodes are being investigated for use in optical links for High Energy Physics experiments. In order to withstand the harsh environment in the innermost detector regions of the Large Hadron Collider at CERN and in future High Energy Physics experiments beyond the Large Hadron Collider, components will have to be resistant against extreme levels of radiation. First, we show that Mach-Zehnder modulators, which lost their functionality after X-ray irradiation, can be fully recovered by applying a forward bias after irradiation. Devices irradiated and recovered withstand the same TID when re-irradiated. Furthermore, it is presented that by applying a forward bias already during irradiation, the irradiation-induced degradation can be compensated. The possibility of device recovery could lead to a tremendous increase of radiation resistance of the optical links. Additionally, the resistance against displacement damage and ionizing radiation of silicon germanium photodiodes is presented.

show abstract

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

et al. 2017

View full text Add to dashboard Cite

Abstract:In this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit. AbstractIn this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are downconverted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

show abstract

Radiation hardness evaluation and phase shift enhancement through ionizing radiation in silicon Mach-Zehnder modulators

Cited by 7 publications

References 17 publications

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Radiation tolerance enhancement of silicon photonics for HEP applications

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

Contact Info

Product

Resources

About