Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films

Tsaur, B. Y.; Sferrino, Vincent J; Choi, H. K.; Chen, C. K.; Mountain, R. W.; Schott, J. T.; Shedd, W.; LaPierre, D. C.; Blanchard, R.R.

doi:10.1109/tns.1986.4334607

Cited by 19 publications

(2 citation statements)

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“…Using experimentally established values for charge density and charge centroid at a radiation dose of 5 10 rad(Si) and an applied field of 2. 5 10 V/cm (Figs. 4 and 5), ( and for the ZMR buried SiO ), one obtains an electric field value of 4.2 10 V/cm.…”

Section: Discussionmentioning

confidence: 96%

“…In n-channel MOSFET's the positive charge trapped in buried oxides can induce a parasitic back-channel conduction in the Si film. A commonly used technique to suppress radiationinduced back-channel conduction is additional doping of the Si film at the lower Si/buried oxide interface [5], but in the case of thick buried oxides at high irradiation doses this additional doping is not always sufficient.…”

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confidence: 99%

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Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Barchuk¹,

Kilchitskaya

Lysenko

et al. 1997

IEEE Trans. Nucl. Sci.

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In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMRtechnique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique.

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Section: Discussionmentioning

confidence: 96%

mentioning

confidence: 99%