Radiation effects on surface micromachined comb drives and microengines

Schanwald, L.P.; Schwank, J.R.; Sniegowsi, J.J.; Walsh, D.S.; Smith, Norman F.; Peterson, K.; Shaneyfelt, M.R.; Winokur, P.S.; Smith, James H.; Doyle, B.L.

doi:10.1109/23.736529

Cited by 35 publications

(28 citation statements)

References 12 publications

(3 reference statements)

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“…Os mecanismos do acúmulo de cargas nas camadas de materiais dielétricos de dispositivos MEMS devido à radiação têm sido o foco de várias pesquisas [15,16]. Isto porque, assim como nos circuitos integrados, camadas de óxidos ou nitretos (geralmente SiO 2 ou Si 3 N 4 ) são usadas na microfabricação dos dispositivos e, após os processos, não são totalmente removidos para que atuem como isolante elétrico.…”

Section: Figuraunclassified

“…Isto porque, assim como nos circuitos integrados, camadas de óxidos ou nitretos (geralmente SiO 2 ou Si 3 N 4 ) são usadas na microfabricação dos dispositivos e, após os processos, não são totalmente removidos para que atuem como isolante elétrico. A Tabela 1 resume o efeito do acúmulo de cargas no dielétrico em função do princípio de atuação (ou transdução) [16]. Nota-se que embora a radiação modifique algumas propriedades do silício grande parte do efeito da radiação sobre os dispositivos MEMS está associada à influência do acúmulo de cargas no dielétrico sobre o mecanismo de atuação.…”

Section: Figuraunclassified

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Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

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RESUMOEste artigo discute o emprego do carbeto de silício (SiC), na forma de substrato e filme fino, em sensores MEMS (MicroElectro-Mechanical Systems) para aplicações em ambientes sujeitos a condições extremas, especialmente no setor aeroespacial. As propriedades físicas e químicas do SiC que o tornam um material adequado para dispositivos eletrônicos e sensores são descritas. Os conceitos, evolução e aplicações da tecnologia MEMS são apresentados. Uma visão geral sobre o estágio atual de desenvolvimento de sensores MEMS baseados em SiC e uma análise das pesquisas realizadas nesta área no exterior e no Brasil, tanto nas universidades quanto nas indústrias, são também apresentad as. Os recentes avanços alcançados, as dificuldades encontradas e o impacto dessas pesquisas são discutidos, bem como as perspectivas para um futuro próximo.Palavras-chave: carbeto de silício, materiais semicondutores, micro-sensores, aplicações aeroespaciais. ABSTRACTThis paper discusses the use of silicon carbide (SiC), in bulk and thin-film form, in MEMS (Micro-Electro-Mechanical Systems) sensors for extreme environment applications, especially in aerospace. The physical and chemical properties of SiC that make it a suitable material for electronic devices and sensors are described. Concepts, developments and applications of MEMS technology are presented. An overview of the current stage of development of SiC-based MEMS sensors and an analysis of research conducted in this area in Brazil and abroad, both in universities and industries are also presented. The recent progress made, difficulties encountered and the impact of these investigations are discussed as well as the outlook for the near future.

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Section: Figuraunclassified

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

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“…Schanwald et al 35 discuss the possibility that wear processes and friction could be affected by radiation due to the sensitivity of those effects to trapped charge. They also suggest that radiation-induced charging may enhance microwelding across small gaps.…”

Section: Mechanical Failures Related To Ionizationmentioning

confidence: 99%

“…35 Those devices did contain dielectrics ͑SiO 2 and SiN x ͒, but not in a geometry where charging could directly influence device operation.…”

Section: Survey Of Radiation Tests Performed Onmentioning

confidence: 99%

“…Floating electrodes charge up and cause device failure sooner than electrodes whose potential is externally fixed. 35 Comb-drive actuators carefully designed with no exposed dielectric between or under moving parts ͑such as the Sercalo Microtechnology 1 ϫ 2 optical switch 43 or the Sandia microengines 35 ͒ have been shown to operate with no change after doses of more than 20 krad and 10 Mrad, respectively.…”

Section: Electrostatic Microelectromechanical System Sensors and Actumentioning

confidence: 99%

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Radiation sensitivity of microelectromechanical system devices

Shea

2009

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The sensitivity of microelectromechanical system ͑MEMS͒ devices to radiation is reviewed, with an emphasis on radiation levels representative of space missions rather than of operation in nuclear reactors. As a purely structural material, silicon has shown no mechanical degradation after radiation doses in excess of 100 Mrad. MEMS devices, even when excluding control/readout electronics, have, however, failed at doses of only 20 krad, though some devices have been shown to operate correctly for doses greater than 10 Mrad. Radiation sensitivity depends strongly on the sensing or actuation principle, device design, and materials, and is linked primarily to the impact on device operation of radiation-induced trapped charge in dielectrics. MEMS devices operating on electrostatic principles can be highly sensitive to charge accumulation in dielectric layers, especially for designs with dielectrics located between moving parts. In contrast, thermally and electromagnetically actuated MEMS are much more radiation tolerant. MEMS operating on piezoresitive principles start to slowly degrade at low doses, but do not fail catastrophically until doses of several Mrad. A survey of all published reports of radiation effects on MEMS is presented, as well as a summary of techniques that can improve their radiation tolerance.

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Intelligent Model‐Based Fault Diagnosis of MEMS

Izadian

2015

Materials and Failures in MEMS and NEMS

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Radiation effects on surface micromachined comb drives and microengines

Cited by 35 publications

References 12 publications

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

Radiation sensitivity of microelectromechanical system devices

Intelligent Model‐Based Fault Diagnosis of MEMS

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