Radiation effects on semiconductor devices

Gregory, Bob; Gwyn, C. W.

doi:10.1109/proc.1974.9605

Cited by 45 publications

(11 citation statements)

References 27 publications

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“…The electrical conductivity of lunar soils was found to have a temperature dependence characteristic of amorphous semiconductors [ Olhoeft et al , 1974], which was interpreted as a consequence of radiation damage. Neutron radiation introduces dielectric relaxations in electronic semiconductors as carriers are heterogeneously affected in the space‐charge region around the p‐n junction [ Gregory and Gwyn , 1974]. No experiments have been done to date specifically to assess the effects of radiation‐induced surface damage on the dielectric properties of adsorbed water.…”

Section: Discussionmentioning

confidence: 99%

Dielectric signatures of adsorbed and salty liquid water at the Phoenix landing site, Mars

Stillman

Grimm

2011

J. Geophys. Res.

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[1] The real part of the dielectric permittivity of the Martian regolith was measured by the Thermal and Electrical Conductivity Probe (TECP) on the Phoenix lander. We interpret these data using laboratory measurements of permittivity as a function of H 2 O and salt content, soil type, and temperature. Due to variability in sensor coupling, we focus on data taken at one locality ("Vestri") three separate times, spanning multiple sols. A daytime increase in permittivity suggests progressive melting of a heterogeneous, disconnected, salty ice with a eutectic temperature of ∼239 K, which is close to the eutectic temperatures of NaClO 4 or MgCl 2 . We found no evidence for Mg(ClO 4 ) 2 . NaClO 4 and MgCl 2 are consistent with precipitation by freezing following a prior epoch of high obliquity. The evaporation of diurnal briny meltwater is inhibited by surface tension in small pores. An increase in permittivity occurred on the night of sol 70 that coincided with surface frost and measurement of a decrease in atmospheric water vapor. The permittivity jump can be matched by an increase in adsorbed H 2 O from ∼1 monolayer to 3 monolayers in an analog soil with a Viking-like specific surface area (17 m 2 /g). However, the amount of adsorbed H 2 O is an order of magnitude larger than that inferred to have precipitated during the night. We suggest that the electrical signature of adsorbed water on Mars is stronger than we measured in the laboratory, possibly due to radiation damage of the regolith.Citation: Stillman, D. E., and R. E. Grimm (2011), Dielectric signatures of adsorbed and salty liquid water at the Phoenix landing site, Mars, J. Geophys. Res., 116, E09005,

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Section: Discussionmentioning

confidence: 99%

Dielectric signatures of adsorbed and salty liquid water at the Phoenix landing site, Mars

Stillman

Grimm

2011

J. Geophys. Res.

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“…Energy band diagram of an MOS (n-type silicon) in (a) accumulation, (b) depletion, and (c) inversion. in gate charge, dQg, will induce an equal but opposite change in the charge, dQ s^, in the silicon surface depletion region and can be written as (3) and (4) where C is the total capacitance of the MOS system. Using eq (2), the capacitance can be written as…”

Section: The Metal-oxide-semiconductor Structurementioning

confidence: 99%

“…The presence of oxide/semiconductor interface trapped charge, oxide trapped charge, oxide fixed charge, mobile oxide charge, and the spatial nonuniformi ty of physical parameters of the oxide or the semiconductor can adversely affect the operation of metal-oxide-semiconductor (MOS) devices and can lead to the failure of MOS integrated circuits (ICs). Traditionally, these imper fections were of interest principally when the ICs were reguired to operate in a radiation environment, since ionizing radiation can produce defects and can create free carriers to charge them [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Production-compatible microelectronic test structures for the measurement of interface state density and neutral trap density

Russell¹

1982

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Interface states and oxide neutral traps are defects in metaloxide-semiconductor (MOS) structures which adversely affect the operation of integrated circuits (ICs). For very large scale integration (VLSI), the advanced techniques which are used to fabricate circuits with devices of submicrometer geometries expose the devices to ionizing radiation which can create these defects or alter the number of defects and their charge state and thus modify device operating characteristics. The physical identities of the defects which trap charge at the interface and in the bulk oxide are not well established. This means that one cannot a priori predict the behavior of the defects to a stress or fabrication process. Thus, it is desirable that the density of these defects be monitored routinely and that the measurement method used be easy to perform and fast and that it provide unambiguous results and be compatible with a production environment. The purpose of this study is to identify production-compatible measurement methods which can be used for routine measurement of neutral trap density and interface trapped charge. This study reviews the application of existing methods for quantifying the number of these defects. Methods determined to be most appropriate for the stated purpose are discussed in detail.

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“…A major problem with both of these dosimetry methods is the permanence of radiation effects in the semiconductor devices. 7 This problem prevents calibration of an individual dosimeter. For the MOSC, the precision is limited to + 5% of dose even when devices from the same silicon wafer are tested.4…”

Section: Mnos Theorymentioning

confidence: 99%

Use of a Metal-Nitride-Oxide-Semiconductor as the Detector for a Radiation Dosimeter

Fraass

Tallon²

1978

IEEE Trans. Nucl. Sci.

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A method of radiation dosimetry using a Metal-Nitride-Oxide-Semiconductor (MNOS) transitor as the detector was developed and partially evaluated.An MNOS dosimeter is shown capable of measuring doses from 10 k rads to 4 M rads. The measured electrical characteristics of the MNOS transitor, which are altered by ionizing radiation, can be electrically reset to their pre-irradiation values. Repeatability of observations of threshold voltage versus radiation dosage indicates a precision of ± 1% of measured dose from 200 k rads to 4 M rads (Si). Dosage in rads is obtained by reference to a calibrated Co60 source exposure rate rather than to absorbed dose in the dosimeter.A schematic is given for the circuit tested. Determination of dosage with the system is indirect and requires the use of calibration curves. Each dosimeter must be individually calibrated.Exposure to 2 X 107 rads did not degrade performance. The MNOS transistors eventually failed: probably due to charge migration from the large integrated circuit chip on which they were fabricated. Discrete, non-stepped gage MNOS transistors are recommended.

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Radiation effects on semiconductor devices

Cited by 45 publications

References 27 publications

Dielectric signatures of adsorbed and salty liquid water at the Phoenix landing site, Mars

Dielectric signatures of adsorbed and salty liquid water at the Phoenix landing site, Mars

Production-compatible microelectronic test structures for the measurement of interface state density and neutral trap density

Use of a Metal-Nitride-Oxide-Semiconductor as the Detector for a Radiation Dosimeter

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