Radiation effects on quantum dot enhanced solar cells

Kerestes, Christopher; Forbes, David V.; Bailey, Christopher G.; Spann, John; Richards, B. C.; Sharps, Paul; Hubbard, Seth M.

doi:10.1117/12.910835

Cited by 7 publications

(6 citation statements)

References 13 publications

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“…The external quantum efficiency (EQE) at wavelengths associated with the MQW region, i.e., at wavelengths longer than the bandgap of the bulk material, has been reported to be relatively insensitive to radiation. However, and especially in comparison to their p-n junction counterparts, an increased degradation in the fill factor (FF), resembling a shunt-like behavior in the current versus voltage (J/V) characteristics, has been observed [3], [8], [12]- [14]. This has also been seen in this study; see Fig.…”

supporting

confidence: 66%

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Hoheisel

González

Lumb

et al. 2014

IEEE J. Photovoltaics

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In this paper, a detailed analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. While the primary source of radiation damage of photovoltaic devices is minority carrier lifetime reduction, we found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n-or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.Index Terms-III-V semiconductor materials, photovoltaic cells, quantum-well devices, radiation effects.

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supporting

confidence: 66%

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Hoheisel

González

Lumb

et al. 2014

IEEE J. Photovoltaics

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“…We can generally conclude that the radiation hardness is parameter‐specific: making a characteristic of a quantum‐size semiconductor structure more radiation tolerant does not mean the same improvement with respect to other parameters. So, the enhancement of the radiation hardness of the photoluminescence intensity of quantum dot structures and corresponding laser parameters is not correlated with the improvement of the radiation tolerance of the photosensitivity and solar cell parameters .…”

Section: Discussionmentioning

confidence: 99%

“…So, the enhancement of the radiation hardness of the photoluminescence intensity of quantum dot structures and corresponding laser parameters is not correlated with the improvement of the radiation tolerance of the photosensitivity and solar cell parameters [17][18][19]. …”

Section: à2mentioning

confidence: 96%

Influence of electron irradiation on p-n junctions in SiGe superlattices

Siahlo

Poklonski

Lastovski³

et al. 2014

Phys. Status Solidi B

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The influence of 3–4 MeV electron irradiation on the electrical properties of p–n junctions formed inside Si6Ge4 superlattices (SLs) has been studied. The current–voltage characteristics and capacitance–voltage (C–V) profiles have been measured in the temperature range from 4.2 to 300 K. Negative differential conductance (S‐type current–voltage characteristics) was observed at 77 K after irradiation. The carrier removal rate upon electron irradiation of the SiGe SL does not differ from that of a SiGe alloy with a comparable doping level, which is at variance with the formerly obtained data on a higher radiation hardness of the photoluminescence in similar SLs. We conclude that the radiation hardness is parameter‐specific: making a characteristic of a quantum‐size semiconductor structure more radiation tolerant does not mean the same improvement with respect to other parameters.

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“…However, the overall radiation behavior reported in highly performing optimized quantum dots/wells solar cells is similar to standard devices. 7,22,23 Here we propose the use of III-V nanowire (NW) arrays as space solar cell architecture with dramatically enhanced radiation tolerance versus planar architectures. The NW solar cells consist of arrays of high-aspect-ratio semiconductor structures ("wires") that have appropriate dimensions to enhance light absorption [24][25][26][27] and to reduce damage caused by high-energy particle radiation as we report here and it has been observed in photo-detectors.…”

Section: Introductionmentioning

confidence: 99%

Radiation Tolerant Nanowire Array Solar Cells

et al. 2019

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Space power systems require photovoltaics that are lightweight, efficient, reliable, and capable of operating for years or decades in space environment. Current solar panels use planar multijunction, III–V based solar cells with very high efficiency, but their specific power (power to weight ratio) is limited by the added mass of radiation shielding (e.g., coverglass) required to protect the cells from the high-energy particle radiation that occurs in space. Here, we demonstrate that III–V nanowire-array solar cells have dramatically superior radiation performance relative to planar solar cell designs and show this for multiple cell geometries and materials, including GaAs and InP. Nanowire cells exhibit damage thresholds ranging from ∼10–40 times higher than planar control solar cells when subjected to irradiation by 100–350 keV protons and 1 MeV electrons. Using Monte Carlo simulations, we show that this improvement is due in part to a reduction in the displacement density within the wires arising from their nanoscale dimensions. Radiation tolerance, combined with the efficient optical absorption and the improving performance of nanowire photovoltaics, indicates that nanowire arrays could provide a pathway to realize high-specific-power, substrate-free, III–V space solar cells with substantially reduced shielding requirements. More broadly, the exceptional reduction in radiation damage suggests that nanowire architectures may be useful in improving the radiation tolerance of other electronic and optoelectronic devices.

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Radiation effects on quantum dot enhanced solar cells

Cited by 7 publications

References 13 publications

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Influence of electron irradiation on p-n junctions in SiGe superlattices

Radiation Tolerant Nanowire Array Solar Cells

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