Radiation Effects on InGaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence

Tringe, Joseph W.; Conway, A. M.; Felter, T. E.; Chan, Wei-Wen; Castelaz, J. M.; Lordi, Vincenzo; Xia, Yong; Stevens, Charles G.; Wetzel, Christian

doi:10.1109/tns.2008.2006169

Cited by 10 publications

(10 citation statements)

References 12 publications

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“…As we discussed for the electronic devices, it has been experimentally shown that the displacement energy is inversely Q52 ECS Journal of Solid State Science and Technology, 5 (2) Q35-Q60 (2016) proportional to lattice constant. [172][173][174][175][176][177][178] The minority carrier lifetime, τ, in LEDs is sensitive to the presence of displacement damage and is related to the particle flux by…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…163 Alpha particles.-InGaN quantum well structures (470 and 510 nm) on GaN epilayers exposed to 500 keV alpha particles to fluences >10 14 cm −2 showed only small wavelength shifts were observed even with the highest fluences. 175 Cathodoluminescence experiments showed that luminescence in the quantum wells was strongly influenced by charges injected deep into the GaN epilayer. The 500 keV alpha penetration depth was ∼ 1 μm, so that defects were created at a faster rate in GaN compared to InGaN as alpha particles slowed and stopped within a minority carrier diffusion length of the quantum wells.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…As we discussed for the electronic devices, it has been experimentally shown that the displacement energy is inversely proportional to lattice constant. [172][173][174][175][176][177][178] The minority carrier lifetime, τ, in LEDs is sensitive to the presence of displacement damage and is related to the particle flux by (1/τ) − (1/τ o ) = /K where τ o is the initial lifetime, τ the lifetime after irradiation and K is known as the lifetime damage constant. For GaN, K is ∼10 −7 cm 2 s per particle for 40 MeV protons.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

268

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

268

130

View full text Add to dashboard Cite

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“…It is expected that ionizing radiation such as electrons and protons will produce point defects and complexes thereof. [35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52] The primary defects produced in GaN by irradiation are Frenkel pairs in the Ga and N sublattices. [53][54][55][56][57][58][59][60][61][62][63] The theory of N vacancies in Al x Ga 1Àx N suggests that these are shallow donors in GaN, 26 but in AlN, this same defect is a deep trap.…”

Section: A Energy Levels Of Radiation Defects In Ganmentioning

confidence: 99%

Review of radiation damage in GaN-based materials and devices

Pearton

Deist

Ren

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

195

133

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A review of the effects of proton, neutron, c-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. V

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“…Alpha Particles Damage -GaN LEDs have been irradiated with 500 keV alpha particles at fluences above 10 14 −2 using cathodoluminescence [48]. These experiments proved to be consistant with the previously shown irradiation damage.…”

Section: Radiation Damage In Gan Ledsmentioning

confidence: 66%

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

Pachol¹

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A Low-Powered Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs Matthew J. Pachol III-V semiconductor materials exhibit robustness and natural hardness when exposed to ionizing radiation and temperature swings. With these characteristics in mind, III-V Nitride Light Emitting Diodes (LEDs) are ideal devices for space-based applications and missions. The effects of ionizing radiation on optoelectronic devices comprised of III-V materials have been studied, but results have been obtained through experiments performed in terrestrial laboratories. While these laboratory tests may lend insight into device lifetimes, performance degradation, etc., they are no substitute for similar measurements and characterization performed in space. Interest in small satellite applications have grown over the past decade. These solutions range from Earth imaging to communication networks. Small satellites provide a unique opportunity to gain an understanding of the reliability and operational characteristics of III-V based materials and other semiconductor devices while exposed to the environment of space. To meet the constraints of the small satellite, a Low-powered Optoelectronic Characterizer for CubeSat (LOCC) has been developed in PC/104 form, measuring 3.6 by 3.8 inches. LOCC performs current-voltage and electroluminescent measurements of LEDs while in space. The LOCC system is designed using low-power integrated circuits that can supply over 100 mA of current to LEDs while maintaining low power of 3.2W under operation. This thesis presents the design, implementation, and control of the LOCC system. This includes system block diagrams, printed circuit board layouts, interfacing, firmware, and software. Additionally, the resulting current-voltage measurements, required wattage, and required data storage are presented to illustrate functionality. This instrumentation enables the study of optoelectronic devices in space, allowing future research to focus on producing radiation hard light emitting devices that can operate in environments with reduced shielding against ionizing radiation while maintaining device reliability.

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Radiation Effects on InGaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence

Cited by 10 publications

References 12 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Review of radiation damage in GaN-based materials and devices

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

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