Radiation effects on film formation and nanostructural changes of iron disilicide thin film

Sasase, Masato; Yamamoto, Hiroyuki; Okayasu, Satoru

doi:10.1016/j.nimb.2011.01.091

Cited by 1 publication

(1 citation statement)

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“…3(a) and (b) are similar to each other. The TEM observation of the -FeSi 2 film on Si (100) substrate treated with 0.8 keV Ne + have shown that the film had a uniform thickness and a smooth interface over a wide area [19]. On the other hand, the RHEED pattern shown in fig.…”

Section: Applicability Of Se With Lower Incident Ion Energymentioning

confidence: 99%

Application of sputter etching treatment to the formation of semiconducting silicide film on Si substrate

Yamaguchi

Esaka

Sasase

et al. 2012

Trans. Mat. Res. Soc. Japan

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A couple of ion-induced processes are applied to fabricate a highly crystalline film of semiconducting silicide, -FeSi 2 on a Si substrate. One is the sputter deposition process, in which 35 keV Ar + ions are utilized to deposit sputtered iron (Fe) on Si substrate to form -FeSi 2 in the temperature range around 973 K by means of ion beam sputter deposition (IBSD) method. The other is the sputter etching (SE) of the substrate surface prior to deposition, which plays a critical role in determining the crystalline properties of -FeSi 2 films. Authors have shown that when the SE conditions are properly chosen, continuous and relatively homogeneous -FeSi 2 thin films with high crystal orientation are fabricated with IBSD method in the temperature range of 873-973 K, with the film thickness of 50-100 nm. In addition, the interface is fairly smooth, where the transition layer at the interface is limited to a few atomic layers. Although care was taken to minimize the defect concentration in the obtained films, even the most highly-oriented -FeSi 2 films contain a small amount of defects. To make the defect concentration as low as possible, SE treatment was performed at lower incident energies. It was found that for Ne + ions the incident energy could be lowered to 0.8 keV to obtain highly-oriented -FeSi 2 films.

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Section: Applicability Of Se With Lower Incident Ion Energymentioning

confidence: 99%